No. |
Part Name |
Description |
Manufacturer |
2281 |
BCX69-16 |
General Purpose Transistors - SOT89; VCEO=20V; hFE=100..250 |
Infineon |
2282 |
BCX69-25 |
General Purpose Transistors - SOT89; VCEO=20V; hFE=160..375 |
Infineon |
2283 |
BCX70 |
NPN Silicon AF Transistors |
Infineon |
2284 |
BCX70G |
General Purpose Transistors - SOT23; VCEO=45 V |
Infineon |
2285 |
BCX70H |
General Purpose Transistors - SOT23; VCEO=45 V |
Infineon |
2286 |
BCX70J |
General Purpose Transistors - SOT23; VCEO=45 V |
Infineon |
2287 |
BCX70K |
General Purpose Transistors - SOT23; VCEO=45 V |
Infineon |
2288 |
BCX71 |
PNP Silicon AF Transistor |
Infineon |
2289 |
BCX71G |
General Purpose Transistors - SOT23; VCEO=45V |
Infineon |
2290 |
BCX71H |
General Purpose Transistors - SOT23; VCEO=45V |
Infineon |
2291 |
BCX71J |
General Purpose Transistors - SOT23; VCEO=45V |
Infineon |
2292 |
BCX71K |
General Purpose Transistors - SOT23; VCEO=45V |
Infineon |
2293 |
BDP 955 E6327 |
Single AF Transistors for General Purpose |
Infineon |
2294 |
BDP947 |
General Purpose Transistors - NPN Silicon AF Power Transistor for AF driver and output stages |
Infineon |
2295 |
BDP948 |
General Purpose Transistors - SOT223 package |
Infineon |
2296 |
BDP949 |
General Purpose Transistors - NPN Silicon AF Power Transistor for AF driver and output stages |
Infineon |
2297 |
BDP950 |
General Purpose Transistors - SOT223 package |
Infineon |
2298 |
BDP951 |
General Purpose Transistors - NPN Silicon AF Power Transistor for AF driver and output stages |
Infineon |
2299 |
BDP952 |
General Purpose Transistors - SOT223 package |
Infineon |
2300 |
BDP953 |
General Purpose Transistors - NPN Silicon AF Power Transistor for AF driver and output stages |
Infineon |
2301 |
BDP954 |
General Purpose Transistors - SOT223 package |
Infineon |
2302 |
BDP955 |
General Purpose Transistors - NPN Silicon AF Power Transistor for AF driver and output stages |
Infineon |
2303 |
BDP956 |
General Purpose Transistors - SOT223 package |
Infineon |
2304 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
2305 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
2306 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
2307 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
2308 |
BF1005SW |
Silicon N-Channel MOSFET Tetrode |
Infineon |
2309 |
BF1005W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
2310 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| | | |