| No. |
Part Name |
Description |
Manufacturer |
| 2281 |
2SB953 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2282 |
2SB953A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2283 |
2SB954 |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 2284 |
2SB954A |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 2285 |
2SB956 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 2286 |
2SB967 |
Silicon PNP epitaxial planar type(For low-frequency power amplification) |
Panasonic |
| 2287 |
2SB968 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 2288 |
2SB970 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 2289 |
2SB976 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 2290 |
2SC0829 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 2291 |
2SC1000 |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
| 2292 |
2SC1000G |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
| 2293 |
2SC1008 |
Medium Power Amplifiers and Switches |
Unknow |
| 2294 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 2295 |
2SC1009 |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 2296 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 2297 |
2SC1009A |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 2298 |
2SC1009R |
NPN silicon epitaxial transistor, FM/AM RF amplifier, mixer, oscillator, converter |
NEC |
| 2299 |
2SC1047 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 2300 |
2SC1059 |
Transistor Silicon NPN Triple Diffused LTP, intended for use in Class A Output Amplifier |
Hitachi Semiconductor |
| 2301 |
2SC1060 |
Silicon NPN Triple Diffused Transistor, intended for use in 10~20 HiFi OTL Amplifier |
Hitachi Semiconductor |
| 2302 |
2SC1060 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SA670 and 2SA671 |
Unknow |
| 2303 |
2SC1060 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SA670 and 2SA671 |
Unknow |
| 2304 |
2SC1061 |
Silicon NPN Triple Diffused Transistor, intended for use in 10~20 HiFi OTL Amplifier |
Hitachi Semiconductor |
| 2305 |
2SC1061 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 2306 |
2SC1077 |
Silicon NPN epitaxial planar transistor, VHF power amplifiers applications (high voltage), RF Wide-Band amplifiers 40W 175MHz |
TOSHIBA |
| 2307 |
2SC1077 |
Silicon NPN epitaxial planar transistor, VHF power amplifiers applications (high voltage), RF Wide-Band amplifiers 40W 175MHz |
TOSHIBA |
| 2308 |
2SC1079 |
Silicon NPN triple diffused MESA power transistor, high power amplifier applications |
TOSHIBA |
| 2309 |
2SC1080 |
Silicon NPN triple diffused MESA power transistor, high power amplifier applications |
TOSHIBA |
| 2310 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
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