| No. |
Part Name |
Description |
Manufacturer |
| 2311 |
NTSV20100CT |
20A, 100V Very Low Forward Voltage Trench-based Schottky Rectifier |
ON Semiconductor |
| 2312 |
NTSV20U100CT |
20A, 100V Very Low Forward Voltage Trench-based Schottky Rectifier |
ON Semiconductor |
| 2313 |
NTSV30100CT |
30A, 100V Very Low Forward Voltage Trench-Based Schottky Rectifier |
ON Semiconductor |
| 2314 |
OM4206SR |
16A 100V Hi-Rel Schottky Common Cathode Diode in a D2 package |
International Rectifier |
| 2315 |
OM4206ST |
16A 100V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package |
International Rectifier |
| 2316 |
OM4216SA |
25A 100V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package |
International Rectifier |
| 2317 |
OM4216SW |
25A 100V Hi-Rel Schottky Common Cathode Diode in a D3 package |
International Rectifier |
| 2318 |
OM4220SC |
50A 100V Hi-Rel Schottky Common Cathode Diode in a TO-258AA package |
International Rectifier |
| 2319 |
OM4229SS |
100A 100V Hi-Rel Schottky Common Cathode Diode in a S-6 package |
International Rectifier |
| 2320 |
P0102AA |
Sensitive gate SCR, 100V |
SGS Thomson Microelectronics |
| 2321 |
P0102AB |
Sensitive gate SCR, 100V |
SGS Thomson Microelectronics |
| 2322 |
P40NF10L |
N-CHANNEL 100V - 0.028 OHM - 40A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET |
ST Microelectronics |
| 2323 |
P5KE100 |
Diode TVS Single Uni-Dir 100V 500W 2-Pin DO-41 |
New Jersey Semiconductor |
| 2324 |
P5KE100CA |
Diode TVS Single Bi-Dir 100V 500W 2-Pin DO-41 |
New Jersey Semiconductor |
| 2325 |
P600B |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 100V. Maximum RMS voltage 70V. Maximum DC blocking voltage 100V |
Wing Shing Computer Components |
| 2326 |
P600B |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 100V. Maximum RMS voltage 70V. Maximum DC blocking voltage 100V |
Wing Shing Computer Components |
| 2327 |
P600D-007 |
Diode 100V 6A 2-Pin Case P-6 |
New Jersey Semiconductor |
| 2328 |
P6SMB100 |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 100V. 600W peak power, 3.0W steady state. |
Motorola |
| 2329 |
P6SMB100A |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 100V. 600W peak power, 3.0W steady state. |
Motorola |
| 2330 |
PB-IRF1310NL |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 2331 |
PB-IRF1310NS |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2332 |
PB-IRF3710L |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 2333 |
PB-IRF3710S |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2334 |
PB-IRF3710ZL |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 2335 |
PB-IRF3710ZS |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2336 |
PB-IRF520NL |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 2337 |
PB-IRF520NS |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2338 |
PB-IRF520VL |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 2339 |
PB-IRF520VS |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2340 |
PB-IRF530NL |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
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