| No. |
Part Name |
Description |
Manufacturer |
| 2311 |
2N3815 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 2312 |
2N3816 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 2313 |
2N3816A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 2314 |
2N3817 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 2315 |
2N3817A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 2316 |
2N3818 |
NPN silicon transistor for high-frequency power applications to 150 MHz |
Motorola |
| 2317 |
2N382 |
PNP germanium transistor for small-signal audio amplifiers, Class B push-pull output stages and medium-speed switching circuits |
Motorola |
| 2318 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 2319 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 2320 |
2N3823 |
Silicon N-channel junction field-effect transistor designed for VHF amplifier and mixer applications |
Motorola |
| 2321 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 2322 |
2N383 |
PNP germanium transistor for small-signal audio amplifiers, Class B push-pull output stages and medium-speed switching circuits |
Motorola |
| 2323 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 2324 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
| 2325 |
2N3866 |
Silicon NPN epitaxial planar transistor for VHF and UHF power stages, oscillator stages and driver stages |
AEG-TELEFUNKEN |
| 2326 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 2327 |
2N3866 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 2328 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 2329 |
2N3866 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 2330 |
2N3866 |
Silicon NPN planar epitaxial transistor for driver stages in transmitters up to 400 MHz at 28 V supply voltage |
VALVO |
| 2331 |
2N3867 |
Planar transistor for switching applications |
SGS-ATES |
| 2332 |
2N3868 |
Planar transistor for switching applications |
SGS-ATES |
| 2333 |
2N3903 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 2334 |
2N3904 |
GENERAL PURPOSE NPN TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2335 |
2N3904 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 2336 |
2N3904CSM |
GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2337 |
2N3905 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 2338 |
2N3906 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 2339 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 2340 |
2N3924 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
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