No. |
Part Name |
Description |
Manufacturer |
2311 |
GH3-R024SK5 |
Relay. Coil voltage 24VDC. Footprint regular. Sealed. Coil sensitivity 0.2W. Duty version 5A. |
Global Components & Controls |
2312 |
GH3-R024SL2 |
Relay. Coil voltage 24VDC. Footprint regular. Sealed. Coil sensitivity 0.45W. Duty version 2A. |
Global Components & Controls |
2313 |
GH3-R024SL5 |
Relay. Coil voltage 24VDC. Footprint regular. Sealed. Coil sensitivity 0.45W. Duty version 5A. |
Global Components & Controls |
2314 |
GH3-R024SNIL2 |
Relay. Coil voltage 24 VDC. Footprint regular. Sealed. Coil sensitivity 0.36W. Duty version 2A. |
Global Components & Controls |
2315 |
GH3-R024SNIL5 |
Relay. Coil voltage 24VDC. Footprint regular. Sealed. Coil sensitivity 0.36W. Duty version 5A. |
Global Components & Controls |
2316 |
GMA01U |
Epitaxial Planar Silicon Diode Very High-Speed Switching, Bias Stabilizing Applications |
SANYO |
2317 |
GMA02 |
Silicon Epitaxial Planar Type Very High-Speed Switching Diode |
SANYO |
2318 |
GMS34004TK |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version |
Hynix Semiconductor |
2319 |
GMS34004TM |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version |
Hynix Semiconductor |
2320 |
GMS34004TW |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-4.2MHz at WIDE version |
Hynix Semiconductor |
2321 |
GMS34112TK |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
2322 |
GMS34112TM |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
2323 |
GMS34112TW |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 300KHz-4.2MHz at WIDE version. Normal operating voltage 4.0-5.0V |
Hynix Semiconductor |
2324 |
GMS34140TK |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 10. Operating frequency 300KHz-500KHz at KHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
2325 |
GMS34140TM |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 10. Operating frequency 2.4MHz-4MHz at MHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
2326 |
GMS34140TW |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 10. Operating frequency 300KHz-4.2MHz at WIDE version. Normal operating voltage 4.0-5.0V |
Hynix Semiconductor |
2327 |
GMS81C2012LQ |
CMOS single-chip 8-bit microcontroller with A/D converter & VED driver. ROM size 12K bytes. RAM size 448 bytes. Mask version. |
HYUNDAI Micro Electronics |
2328 |
GMS81C2012Q |
CMOS single-chip 8-bit microcontroller with A/D converter & VED driver. ROM size 12K bytes. RAM size 448 bytes. Mask version. |
HYUNDAI Micro Electronics |
2329 |
GS1T70-D540F |
ISDN DC-DC CONVERTER (FRENCH VERSION) |
SGS Thomson Microelectronics |
2330 |
GS1T70-D540F |
ISDN DC-DC CONVERTER FRENCH VERSION |
ST Microelectronics |
2331 |
GT100 |
Silicon NPN Very High Power Darlington Transistor |
IPRS Baneasa |
2332 |
GT100/10 |
Silicon NPN Very High Power Darlington Transistor 1000V |
IPRS Baneasa |
2333 |
GT100/3 |
Silicon NPN Very High Power Darlington Transistor 300V |
IPRS Baneasa |
2334 |
GT100/4 |
Silicon NPN Very High Power Darlington Transistor 400V |
IPRS Baneasa |
2335 |
GT100/5 |
Silicon NPN Very High Power Darlington Transistor 500V |
IPRS Baneasa |
2336 |
GT100/6 |
Silicon NPN Very High Power Darlington Transistor 600V |
IPRS Baneasa |
2337 |
GT100/7 |
Silicon NPN Very High Power Darlington Transistor 700V |
IPRS Baneasa |
2338 |
GT100/8 |
Silicon NPN Very High Power Darlington Transistor 800V |
IPRS Baneasa |
2339 |
GT100/9 |
Silicon NPN Very High Power Darlington Transistor 900V |
IPRS Baneasa |
2340 |
GT150 |
Silicon NPN Very High Power Darlington Transistor |
IPRS Baneasa |
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