No. |
Part Name |
Description |
Manufacturer |
2311 |
HP4-L-DC110V |
HP-relay. 10 Amp power relay. 4 form C, neon lamp. Coil voltage 110 V DC. Standard plug-in terminal type (without lamp wired). |
Matsushita Electric Works(Nais) |
2312 |
HSP9501 |
Data Buffer, Programmable, 32MHz, Data Word to 10-Bits |
Intersil |
2313 |
HY51V17403HGJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
2314 |
HY51V17403HGJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
2315 |
HY51V17403HGJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
2316 |
HY51V17403HGLJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
2317 |
HY51V17403HGLJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
2318 |
HY51V17403HGLJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
2319 |
HY51V17403HGLT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
2320 |
HY51V17403HGLT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
2321 |
HY51V17403HGLT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
2322 |
HY51V17403HGT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
2323 |
HY51V17403HGT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
2324 |
HY51V17403HGT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
2325 |
HY51V18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
2326 |
HY51V18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
2327 |
HY51V18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
2328 |
HY51V18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
2329 |
HY51V18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
2330 |
HY51V18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
2331 |
HY51VS17403HGJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
2332 |
HY51VS17403HGJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
2333 |
HY51VS17403HGJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
2334 |
HY51VS17403HGLJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
2335 |
HY51VS17403HGLJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
2336 |
HY51VS17403HGLJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
2337 |
HY51VS17403HGLT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
2338 |
HY51VS17403HGLT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
2339 |
HY51VS17403HGLT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
2340 |
HY51VS17403HGT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
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