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Datasheets for ,

Datasheets found :: 586258
Page: | 74 | 75 | 76 | 77 | 78 | 79 | 80 | 81 | 82 |
No. Part Name Description Manufacturer
2311 104S9AX0 Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max ITT Semiconductors
2312 104S9AX1 Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max ITT Semiconductors
2313 104S9EX0 Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max ITT Semiconductors
2314 104S9EX1 Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max ITT Semiconductors
2315 10500 500 W, 50 V, 1030-1090 MHz common base transistor GHz Technology
2316 10500 500 W, 50 V, 1030-1090 MHz common base transistor GHz Technology
2317 105GT-1 GT thermistor, 1000KOhm SEMITEC
2318 1075MP 75 W, 50 V, 1025-1150 MHz common base transistor GHz Technology
2319 1075MP 75 W, 50 V, 1025-1150 MHz common base transistor GHz Technology
2320 1088 T-1 Lamps, Visible-Infrared Gilway Technical Lamp
2321 1088-1 T- Lens-End Lamps, T-1 Lens-End Lamps Gilway Technical Lamp
2322 1088-19A T- Lens-End Lamps, T-1 Lens-End Lamps Gilway Technical Lamp
2323 1088-9A T-1 Lamps, Visible-Infrared Gilway Technical Lamp
2324 1089 T-1 Lamps, Visible-Infrared Gilway Technical Lamp
2325 1089-9 T-1 Lamps, Visible-Infrared Gilway Technical Lamp
2326 1090MP 90 W, 50 V, 1025-1150 MHz common base transistor GHz Technology
2327 1090MP 90 W, 50 V, 1025-1150 MHz common base transistor GHz Technology
2328 109D Wet Tantalum Capacitors, Axial, Electrolyte Sintered Anode, for Operation to + 125°C, Elastomer-Sealed Vishay
2329 109D Wet Tantalum Capacitors, Axial, Electrolyte Sintered Anode, for Operation to + 125°C, Elastomer-Sealed Vishay
2330 109D Wet Tantalum Capacitors, Axial, Electrolyte Sintered Anode, for Operation to + 125°C, Elastomer-Sealed Vishay
2331 109D Wet Tantalum Capacitors, Axial, Electrolyte Sintered Anode, for Operation to + 125°C, Elastomer-Sealed Vishay
2332 10A015 1.5 W, 20 V, 1000 MHz common emitter transistor GHz Technology
2333 10A015 1.5 W, 20 V, 1000 MHz common emitter transistor GHz Technology
2334 10A030 3 W, 20 V, 1000 MHz common emitter transistor GHz Technology
2335 10A030 3 W, 20 V, 1000 MHz common emitter transistor GHz Technology
2336 10A060 6 W, 20 V, 1000 MHz common emitter transistor GHz Technology
2337 10A060 6 W, 20 V, 1000 MHz common emitter transistor GHz Technology
2338 10PM4AC 10A Single Phase, Avalanche Controlled Rectifier Bridge 400V IPRS Baneasa
2339 10PM6AC 10A Single Phase, Avalanche Controlled Rectifier Bridge 600V IPRS Baneasa
2340 10PM8AC 10A Single Phase, Avalanche Controlled Rectifier Bridge 800V IPRS Baneasa


Datasheets found :: 586258
Page: | 74 | 75 | 76 | 77 | 78 | 79 | 80 | 81 | 82 |



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