No. |
Part Name |
Description |
Manufacturer |
2311 |
104S9AX0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
2312 |
104S9AX1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
2313 |
104S9EX0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
2314 |
104S9EX1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
2315 |
10500 |
500 W, 50 V, 1030-1090 MHz common base transistor |
GHz Technology |
2316 |
10500 |
500 W, 50 V, 1030-1090 MHz common base transistor |
GHz Technology |
2317 |
105GT-1 |
GT thermistor, 1000KOhm |
SEMITEC |
2318 |
1075MP |
75 W, 50 V, 1025-1150 MHz common base transistor |
GHz Technology |
2319 |
1075MP |
75 W, 50 V, 1025-1150 MHz common base transistor |
GHz Technology |
2320 |
1088 |
T-1 Lamps, Visible-Infrared |
Gilway Technical Lamp |
2321 |
1088-1 |
T- Lens-End Lamps, T-1 Lens-End Lamps |
Gilway Technical Lamp |
2322 |
1088-19A |
T- Lens-End Lamps, T-1 Lens-End Lamps |
Gilway Technical Lamp |
2323 |
1088-9A |
T-1 Lamps, Visible-Infrared |
Gilway Technical Lamp |
2324 |
1089 |
T-1 Lamps, Visible-Infrared |
Gilway Technical Lamp |
2325 |
1089-9 |
T-1 Lamps, Visible-Infrared |
Gilway Technical Lamp |
2326 |
1090MP |
90 W, 50 V, 1025-1150 MHz common base transistor |
GHz Technology |
2327 |
1090MP |
90 W, 50 V, 1025-1150 MHz common base transistor |
GHz Technology |
2328 |
109D |
Wet Tantalum Capacitors, Axial, Electrolyte Sintered Anode, for Operation to + 125°C, Elastomer-Sealed |
Vishay |
2329 |
109D |
Wet Tantalum Capacitors, Axial, Electrolyte Sintered Anode, for Operation to + 125°C, Elastomer-Sealed |
Vishay |
2330 |
109D |
Wet Tantalum Capacitors, Axial, Electrolyte Sintered Anode, for Operation to + 125°C, Elastomer-Sealed |
Vishay |
2331 |
109D |
Wet Tantalum Capacitors, Axial, Electrolyte Sintered Anode, for Operation to + 125°C, Elastomer-Sealed |
Vishay |
2332 |
10A015 |
1.5 W, 20 V, 1000 MHz common emitter transistor |
GHz Technology |
2333 |
10A015 |
1.5 W, 20 V, 1000 MHz common emitter transistor |
GHz Technology |
2334 |
10A030 |
3 W, 20 V, 1000 MHz common emitter transistor |
GHz Technology |
2335 |
10A030 |
3 W, 20 V, 1000 MHz common emitter transistor |
GHz Technology |
2336 |
10A060 |
6 W, 20 V, 1000 MHz common emitter transistor |
GHz Technology |
2337 |
10A060 |
6 W, 20 V, 1000 MHz common emitter transistor |
GHz Technology |
2338 |
10PM4AC |
10A Single Phase, Avalanche Controlled Rectifier Bridge 400V |
IPRS Baneasa |
2339 |
10PM6AC |
10A Single Phase, Avalanche Controlled Rectifier Bridge 600V |
IPRS Baneasa |
2340 |
10PM8AC |
10A Single Phase, Avalanche Controlled Rectifier Bridge 800V |
IPRS Baneasa |
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