| No. |
Part Name |
Description |
Manufacturer |
| 2311 |
TS80C186EC20 |
16-bit high-integration embedded processor. 20 MHz, 5 V |
Intel |
| 2312 |
TS80C186XL20 |
16-bit high-integration embedded processor. 20 MHz |
Intel |
| 2313 |
TS80C186XL25 |
16-bit high-integration embedded processor. 25 MHz |
Intel |
| 2314 |
TS80C188EA20 |
16-bit high-integration embedded processor. 20 MHz, 5 V |
Intel |
| 2315 |
TS80C188EC20 |
16-bit high-integration embedded processor. 20 MHz, 5 V |
Intel |
| 2316 |
TS80C188XL20 |
16-bit high-integration embedded processor. 20 MHz |
Intel |
| 2317 |
TS80C188XL25 |
16-bit high-integration embedded processor. 25 MHz |
Intel |
| 2318 |
TSB80C186EA20 |
16-bit high-integration embedded processor. 20 MHz, 5 V |
Intel |
| 2319 |
TSB80C186EB20 |
16-bit high-integration embedded processor. 20 MHz, 5 V |
Intel |
| 2320 |
TSB80C186EC20 |
16-bit high-integration embedded processor. 20 MHz, 5 V |
Intel |
| 2321 |
TSB80C188EA20 |
16-bit high-integration embedded processor. 20 MHz, 5 V |
Intel |
| 2322 |
TSB80C188EB20 |
16-bit high-integration embedded processor. 20 MHz, 5 V |
Intel |
| 2323 |
TSB80C188EC20 |
16-bit high-integration embedded processor. 20 MHz, 5 V |
Intel |
| 2324 |
TU24C256CP3 |
CMOS IIC 2-wire bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
Turbo IC |
| 2325 |
TU24C256CS3 |
CMOS IIC 2-wire bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
Turbo IC |
| 2326 |
TU25C256PC |
CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 4.5V to 5.5V. |
Turbo IC |
| 2327 |
TU25C256PC-2.7 |
CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
Turbo IC |
| 2328 |
TU25C256PI |
CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 4.5V to 5.5V. |
Turbo IC |
| 2329 |
TU25C256PI-2.7 |
CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
Turbo IC |
| 2330 |
TU25C256SC |
CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 4.5V to 5.5V. |
Turbo IC |
| 2331 |
TU25C256SC-2.7 |
CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
Turbo IC |
| 2332 |
TU25C256SI |
CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 4.5V to 5.5V. |
Turbo IC |
| 2333 |
TU25C256SI-2.7 |
CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
Turbo IC |
| 2334 |
UCC3912PWPG4 |
0-3A, 3-8V Single Hot-Swap IC Hi-Side MOSFET, Commercial Temp. 24-TSSOP 0 to 70 |
Texas Instruments |
| 2335 |
UCC3912PWPTRG4 |
0-3A, 3-8V Single Hot-Swap IC Hi-Side MOSFET, Commercial Temp. 24-TSSOP 0 to 70 |
Texas Instruments |
| 2336 |
UCC39151PWPG4 |
0-3A, 7-15V Single Hot-Swap IC Hi-Side MOSFET, 20mA IQ in Sleep Mode, Comm. Temp. 24-TSSOP 0 to 70 |
Texas Instruments |
| 2337 |
UCC39151PWPTRG4 |
0-3A, 7-15V Single Hot-Swap IC Hi-Side MOSFET, 20mA IQ in Sleep Mode, Comm. Temp. 24-TSSOP 0 to 70 |
Texas Instruments |
| 2338 |
UCC3915PWPTRG4 |
0-3A, 7-15V Single Hot-Swap IC Hi-Side MOSFET, 100uA IQ in Sleep Mode, Comm. Temp. 24-TSSOP 0 to 70 |
Texas Instruments |
| 2339 |
UT8Q512 |
512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V. |
Aeroflex Circuit Technology |
| 2340 |
UT8Q512-20ICA |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish hot solder dipped. Military temperature range flow. |
Aeroflex Circuit Technology |
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