| No. |
Part Name |
Description |
Manufacturer |
| 2311 |
KM416V1200B |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 2312 |
KM416V1200BJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 2313 |
KM416V1200BJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 2314 |
KM416V1200BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 2315 |
KM416V1200BJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 2316 |
KM416V1200BJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 2317 |
KM416V1200BJL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 2318 |
KM416V1200BT-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 2319 |
KM416V1200BT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 2320 |
KM416V1200BT-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 2321 |
KM416V1200BTL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 2322 |
KM416V1200BTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 2323 |
KM416V1200BTL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 2324 |
KM416V1200C |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 2325 |
KM416V1200CJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 2326 |
KM416V1200CJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 2327 |
KM416V1200CJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 2328 |
KM416V1200CJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 2329 |
KM416V1200CT-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 2330 |
KM416V1200CT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 2331 |
KM416V1200CTL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 2332 |
KM416V1200CTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 2333 |
KR-1200AAE |
Nominal capacity: 1200mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 12.0mOhm cadnica |
SANYO |
| 2334 |
KR-1200AAE |
Nominal capacity: 1200mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 12.0mOhm cadnica |
SANYO |
| 2335 |
KR-1200AUL |
Nominal capacity: 1200mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 12.0mOhm cadnica |
SANYO |
| 2336 |
KR-1200AUL |
Nominal capacity: 1200mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 12.0mOhm cadnica |
SANYO |
| 2337 |
KS0312A0 |
Base Drive Transistor Module (5 Amperes/1200 Volts) |
Powerex Power Semiconductors |
| 2338 |
KS621220A7 |
Single Darlington Transistor Module (200 Amperes/1200 Volts) |
Powerex Power Semiconductors |
| 2339 |
KS621240 |
Single Darlington Transistor Module 400 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 2340 |
KT521203 |
Split-Dual Darlington Power Module (30 Amperes/1200 Volts) |
Powerex Power Semiconductors |
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