| No. |
Part Name |
Description |
Manufacturer |
| 2311 |
BDX88C |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2312 |
BDY71 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 2313 |
BDY72 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 2314 |
BDY73 |
NPN silicon, epibase, mesa transistor |
Mikroelektronikai Vallalat |
| 2315 |
BDY73 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 2316 |
BDY74 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 2317 |
BDY76 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 2318 |
BDY80 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BDY82 |
SESCOSEM |
| 2319 |
BDY81 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BDY83 |
SESCOSEM |
| 2320 |
BDY82 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BDY80 |
SESCOSEM |
| 2321 |
BDY83 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BDY81 |
SESCOSEM |
| 2322 |
BF324 |
Epitaxial planar PNP transistor, intended for common base input stages in FM tuners |
SGS-ATES |
| 2323 |
BF414 |
Epitaxial planar PNP transistor, intended for use as common base amplifier in the VHF range |
SGS-ATES |
| 2324 |
BF414 |
NPN Silicon RF Transistor (For low-noise, common base VHF and FM stages) |
Siemens |
| 2325 |
BF840 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
| 2326 |
BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
| 2327 |
BFY65 |
Silicon NPN epitaxial planar transistors with high collector base voltage for nixie drivers |
AEG-TELEFUNKEN |
| 2328 |
BFY80 |
Silicon NPN epitaxial planar transistors with high collector base voltage for nixie drivers |
AEG-TELEFUNKEN |
| 2329 |
BLB101SURC-E-6V-P |
10 mm bayonet based LED lamp. Hyper red (peak wavelength 540 nm). |
Kingbright Electronic |
| 2330 |
BLF0810-180 |
Base station LDMOS transistors |
Philips |
| 2331 |
BLF0810-90 |
Base station LDMOS transistors |
Philips |
| 2332 |
BLF900-110 |
Base station LDMOS transistors |
Philips |
| 2333 |
BLF900S-110 |
Base station LDMOS transistors |
Philips |
| 2334 |
BLV80/28 |
VHF Power NPN silicon planar epitaxial transistor intended for use in base stations in the VHF mobile radio band |
Philips |
| 2335 |
BP2 |
Entry & Basic Platform |
Infineon |
| 2336 |
BQ2019 |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter W/High-Speed 1-Wire I/F (HDQ) |
Texas Instruments |
| 2337 |
BQ2019PW |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter W/High-Speed 1-Wire I/F (HDQ) |
Texas Instruments |
| 2338 |
BQ2019PWG4 |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter W/High-Speed 1-Wire I/F (HDQ) 8-TSSOP -20 to 70 |
Texas Instruments |
| 2339 |
BQ2019PWR |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter W/High-Speed 1-Wire I/F (HDQ) |
Texas Instruments |
| 2340 |
BQ2019PWRG4 |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter W/High-Speed 1-Wire I/F (HDQ) 8-TSSOP -20 to 70 |
Texas Instruments |
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