| No. |
Part Name |
Description |
Manufacturer |
| 2311 |
SD1527-08 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 2312 |
SD1527-8 |
NPN Power RF Transistor designed for IFF/DME applications |
SGS Thomson Microelectronics |
| 2313 |
SD1528-6 |
NPN Power RF Transistor designed for IFF/DME TACAN applications |
SGS Thomson Microelectronics |
| 2314 |
SD1528-8 |
Gold Metallized NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
| 2315 |
SD1530-1 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
| 2316 |
SD1530-8 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
| 2317 |
SD1536-03 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 2318 |
SD1536-08 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 2319 |
SD1536-3 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
| 2320 |
SD1536-8 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
| 2321 |
SD1540-3 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
| 2322 |
SD1541 |
NPN Power RF Transistor designed for IFF/DME applications |
SGS Thomson Microelectronics |
| 2323 |
SD1544 |
Microwave Power NPN RF Transistor for class C applications |
SGS Thomson Microelectronics |
| 2324 |
SD1545 |
Microwave Power NPN RF Transistor for class C applications |
SGS Thomson Microelectronics |
| 2325 |
SD1546-1 |
NPN power RF transistor designed for IFF/DME applications |
SGS Thomson Microelectronics |
| 2326 |
SD1554 |
Silicon NPN Power RF Transistor designed for Mode-S Transponder Applications |
SGS Thomson Microelectronics |
| 2327 |
SD1555 |
Silicon NPN Power RF Transistor designed for Mode-S Interrogator applications |
SGS Thomson Microelectronics |
| 2328 |
SD1556 |
Silicon NPN Power RF Transistor designed for Mode-S Transponder Applications |
SGS Thomson Microelectronics |
| 2329 |
SD1557 |
Silicon NPN Power RF Transistor designed for Mode-S Interrogator applications |
SGS Thomson Microelectronics |
| 2330 |
SD1564 |
NPN pulse power RF transistor, UHF pulse power |
SGS Thomson Microelectronics |
| 2331 |
SD1658 |
860-900MHz 40W 24V NPN planar RF transistor |
SGS Thomson Microelectronics |
| 2332 |
SD1851 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 2333 |
SD1851-04 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 2334 |
SD1853 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 2335 |
SD1866 |
1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications |
SGS Thomson Microelectronics |
| 2336 |
SD1891 |
1.65GHz 3W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
| 2337 |
SD1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
| 2338 |
SD1895 |
1.65GHz 15W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
| 2339 |
SD1930 |
Gold metallized N-Channel MOS field-effect RF transistor 28V 400MHz 5W |
SGS Thomson Microelectronics |
| 2340 |
SD4012 |
Gold metallized epitaxial silicon NPN planar RF transistor 3W |
SGS Thomson Microelectronics |
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