| No. |
Part Name |
Description |
Manufacturer |
| 2311 |
MMBT6589T1-D |
High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
ON Semiconductor |
| 2312 |
MMBTA42 |
NPN Silicon Transistor for High Voltages |
Infineon |
| 2313 |
MP2060 |
PNP germanium power transistor for audio amplifier applications |
Motorola |
| 2314 |
MP2061 |
PNP germanium power transistor for audio amplifier applications |
Motorola |
| 2315 |
MP2062 |
PNP germanium power transistor for audio amplifier applications |
Motorola |
| 2316 |
MP2063 |
PNP germanium power transistor for audio amplifier applications |
Motorola |
| 2317 |
MPS2923 |
NPN silicon annular transistor for low-cost, medium-speed |
Motorola |
| 2318 |
MPS2924 |
NPN silicon annular transistor for low-cost, medium-speed |
Motorola |
| 2319 |
MPS2925 |
NPN silicon annular transistor for low-cost, medium-speed |
Motorola |
| 2320 |
MPS3563 |
NPN silicon annular, plastic encapsulated transistor for low-cost amplifier and oscillator applications at VHF and UHF |
Motorola |
| 2321 |
MPS3639 |
PNP silicon annular transistor for low-cost, low-level, high-speed switching applications |
Motorola |
| 2322 |
MPS918 |
NPN silicon annular, plastic encapsulated transistor for low-cost amplifier and oscillator applications at VHF and UHF |
Motorola |
| 2323 |
NE661M04 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 2324 |
NE661M04-T2 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 2325 |
NE698M01-T1 |
NPN epitaxial silicon transistor for microwave high-gain amplification. |
NEC |
| 2326 |
NE699M01-T1 |
NPN epitaxial silicon transistor for microwave high-gain amplification. |
NEC |
| 2327 |
NESG204619 |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION |
NEC |
| 2328 |
NESG204619-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION |
NEC |
| 2329 |
NESG204619-T1-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION |
NEC |
| 2330 |
NESG2046M33 |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION |
NEC |
| 2331 |
NESG2046M33-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION |
NEC |
| 2332 |
NESG2046M33-T3-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION |
NEC |
| 2333 |
NESG210719 |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION |
NEC |
| 2334 |
NESG210719-T1 |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION |
NEC |
| 2335 |
NKS. |
Fusible Type Metal Film Resistors, Fusible resistor for constant current designed for overload protection, Flame retardant coating, Defined switch-off behavior |
Vishay |
| 2336 |
NKT0028 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 2337 |
NKT0029 |
PNP Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 2338 |
NKT0032 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 2339 |
NKT0033 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 2340 |
NKT0128 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
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