| No. |
Part Name |
Description |
Manufacturer |
| 2311 |
IH6201CJE |
Dual CMOS Driver/Voltage Translator |
Intersil |
| 2312 |
IH6201CPE |
Dual CMOS Driver/Voltage Translator |
Intersil |
| 2313 |
IH6201MJE |
Dual CMOS Driver/Voltage Translator |
Intersil |
| 2314 |
IR2186 |
HI and LO MOS Drivers in a 8-pin DIP package |
International Rectifier |
| 2315 |
IR2186S |
HI and LO MOS Drivers in a 8-lead SOIC package |
International Rectifier |
| 2316 |
ISL7457SRH |
Non-Inverting, Quad CMOS Driver |
Intersil |
| 2317 |
JM38510/05052BCA |
CMOS Dual 4-Input NAND Gate |
Texas Instruments |
| 2318 |
JM38510/05151BCA |
CMOS Dual D-Type Flip Flop |
Texas Instruments |
| 2319 |
JM38510/05152BEA |
CMOS Dual J-K Master-Slave Flip-Flop |
Texas Instruments |
| 2320 |
JM38510/05651BEA |
CMOS Decade Counter with 10 Decoded Outputs |
Texas Instruments |
| 2321 |
JM38510/17002BCA |
CMOS Dual 4-Input AND Gate |
Texas Instruments |
| 2322 |
JM38510/17504BEA |
CMOS Dual Monostable Multivibrator |
Texas Instruments |
| 2323 |
JT9692A-AS |
CMOS DIGITAL LSI FOR ANALOG DIGITAL WATCH |
TOSHIBA |
| 2324 |
JTS393 |
Micropower CMOS dual voltage comparator |
ST Microelectronics |
| 2325 |
JTS393C-1AA5 |
Micropower CMOS dual voltage comparator |
ST Microelectronics |
| 2326 |
K4E151611 |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 2327 |
K4E151611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 2328 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 2329 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 2330 |
K4E151612D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 2331 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 2332 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 2333 |
K4E16(7)0411(2)D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 2334 |
K4E16(7)0811(2)D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 2335 |
K4E160411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 2336 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 2337 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 2338 |
K4E160412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 2339 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 2340 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
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