No. |
Part Name |
Description |
Manufacturer |
2311 |
MPS6535 |
PNP Silicon Amplifier Transistor |
ITT Semiconductors |
2312 |
MPS6544 |
NPN silicon amplifier transistor. |
Motorola |
2313 |
MPS6565 |
General Purpose NPN Silicon Amplifier Transistor |
ITT Semiconductors |
2314 |
MPS6566 |
General Purpose NPN Silicon Amplifier Transistor |
ITT Semiconductors |
2315 |
MPS6571 |
NPN low level high gain amplifier. |
Fairchild Semiconductor |
2316 |
MPS6591 |
NPN Silicon Amplifier Transistor |
ITT Semiconductors |
2317 |
MPS8097 |
NPN Silicon Low-Noise, High-Gain Amplifier Transistor |
Motorola |
2318 |
MPS929 |
NPN silicon amplifier transistor. 45 V. |
Motorola |
2319 |
MPSA55 |
PNP Silicon Amplifier Transistor |
Micro Commercial Components |
2320 |
MPSA56 |
PNP Silicon Amplifier Transistor |
Micro Commercial Components |
2321 |
MS-CX2-1 |
SENSORE FOTOELETTRICO ECONOMICO, COMPATTO, CON AMPLIFICATORE INCORPORATO |
etc |
2322 |
MS-CX2-2 |
SENSORE FOTOELETTRICO ECONOMICO, COMPATTO, CON AMPLIFICATORE INCORPORATO |
etc |
2323 |
MS-CX2-3 |
SENSORE FOTOELETTRICO ECONOMICO, COMPATTO, CON AMPLIFICATORE INCORPORATO |
etc |
2324 |
MS-CX2-4 |
SENSORE FOTOELETTRICO ECONOMICO, COMPATTO, CON AMPLIFICATORE INCORPORATO |
etc |
2325 |
MS-CX2-5 |
SENSORE FOTOELETTRICO ECONOMICO, COMPATTO, CON AMPLIFICATORE INCORPORATO |
etc |
2326 |
MS-RF21-1 |
SENSORE FOTOELETTRICO ECONOMICO, COMPATTO, CON AMPLIFICATORE INCORPORATO |
etc |
2327 |
MS-RF22 |
SENSORE FOTOELETTRICO ECONOMICO, COMPATTO, CON AMPLIFICATORE INCORPORATO |
etc |
2328 |
MS-RF23 |
SENSORE FOTOELETTRICO ECONOMICO, COMPATTO, CON AMPLIFICATORE INCORPORATO |
etc |
2329 |
NE461M02 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
2330 |
NE461M02-T1 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
2331 |
NE5209 |
Wideband variable gain amplifier |
Philips |
2332 |
NE5209D |
Wideband variable gain amplifier |
Philips |
2333 |
NE5209N |
Wideband variable gain amplifier |
Philips |
2334 |
NE5219D |
Wideband variable gain amplifier |
Philips |
2335 |
NE5219N |
Wideband variable gain amplifier |
Philips |
2336 |
NE5510179A-T1 |
3.5 V operation silicon RF power MOSFET for 1.9 GHz transmission amplifiers. |
NEC |
2337 |
NE5510279A-T1 |
3.5 V operation silicon RF power MOSFET for GSM1800 transmission amplifiers. |
NEC |
2338 |
NE661M04 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
2339 |
NE661M04-T2 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
2340 |
NE698M01-T1 |
NPN epitaxial silicon transistor for microwave high-gain amplification. |
NEC |
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