No. |
Part Name |
Description |
Manufacturer |
2311 |
TC901 |
The TC901 is a monolithic, auto-zeroed operational amplifier. It is a second-generation design of the TC91X CMOS chopper-stabilized op-amps with on-chip capacitors. Eliminationof the external capacitors allows the designer to increase reli |
Microchip |
2312 |
TC913A |
The TC913 is a monolithic, auto-zeroed operational amplifier. Elimination of the external capacitors allows the designer to increase reliability, lower cost,and simplify design by lowering parts count. Since the TC913 is an auto-zeroing op |
Microchip |
2313 |
TC913B |
The TC913 is a monolithic, auto-zeroed operational amplifier. Elimination of the external capacitors allows the designer to increase reliability, lower cost,and simplify design by lowering parts count. Since the TC913 is an auto-zeroing op |
Microchip |
2314 |
TC962 |
The TC962 is an advanced version of the industry-standard 7662 high-voltage DC-to-DC converter. Using improved design techniques and CMOS construction, the TC962 can source as much as 80mA versus the 7662 ’s 20mA capability. As an in |
Microchip |
2315 |
TCA890 |
AFT-IS for readjustmen of tuner detuning and generation of the tuning voltage |
Siemens |
2316 |
TCA890 |
AFT-IS for readjustmen of tuner detuning and generation of the tuning voltage |
Siemens |
2317 |
TDF2A-1575B-12 |
SPECIFICATION OF DIELECTRIC FILTER |
TOKO |
2318 |
TDFM3A-1907E-11 |
SPECIFICATION OF DIELECTRIC FILTER |
TOKO |
2319 |
TELEPHONE-SET |
Evolution of the telephone set |
SGS-ATES |
2320 |
TERMS |
Definition of IC terms from National Semiconductor Linear Integrated Circuits Data Book 1975 |
National Semiconductor |
2321 |
TERMS |
Definition of Terms - National Semiconductor MOS/LSI Databook 1977 |
National Semiconductor |
2322 |
TIP100 |
8A N-P-N darlington power transistor. 60V, 80W, gain of 1000 at 3A. |
General Electric Solid State |
2323 |
TIP101 |
8A N-P-N darlington power transistor. 80V, 80W, gain of 1000 at 3A. |
General Electric Solid State |
2324 |
TIP102 |
8A N-P-N darlington power transistor. 100V, 80W, gain of 1000 at 3A. |
General Electric Solid State |
2325 |
TIP110 |
2A N-P-N darlington power transistor. 60V, 50W, gain of 1000 at 1A. |
General Electric Solid State |
2326 |
TIP111 |
2A N-P-N darlington power transistor. 80V, 50W, gain of 1000 at 1A. |
General Electric Solid State |
2327 |
TIP112 |
2A N-P-N darlington power transistor. 100V, 50W, gain of 1000 at 1A. |
General Electric Solid State |
2328 |
TIP115 |
2A P-N-P darlington power transistor. 60V, 50W, gain of 1000 at 1A. |
General Electric Solid State |
2329 |
TIP116 |
2A P-N-P darlington power transistor. 80V, 50W, gain of 1000 at 1A. |
General Electric Solid State |
2330 |
TIP117 |
2A P-N-P darlington power transistor. 100V, 50W, gain of 1000 at 1A. |
General Electric Solid State |
2331 |
TL7460N |
Dual 4-input expander gate, designed for extending fan-in of the circuits TL7450N and TL7453N respectively |
AEG-TELEFUNKEN |
2332 |
TLE 6262G |
Systemintegration of Transceiver and Voltage Regulator |
Infineon |
2333 |
TS68C000 |
CMOS version of TS68000, 8/10/12-5 MHz |
Atmel |
2334 |
TS83102G0BMGS |
This latest A/D converter is a thermally enhanced, pin-to-pin compatible version of the high-speed TS83102G0B ADC and is designed ... |
Atmel |
2335 |
U3666M |
Baseband Delay Line o.o64 ms (Improved Version of U3665M) |
TEMIC |
2336 |
U5ZA27(Z) |
ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONICSYSTEM |
TOSHIBA |
2337 |
U5ZA27C |
ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONICSYSTEM |
TOSHIBA |
2338 |
U5ZA40C |
ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONICSYSTEM |
TOSHIBA |
2339 |
U5ZA48C |
ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONICSYSTEM |
TOSHIBA |
2340 |
U5ZA53C |
ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEM |
TOSHIBA |
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