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Datasheets found :: 2360
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No. Part Name Description Manufacturer
2311 TC901 The TC901 is a monolithic, auto-zeroed operational amplifier. It is a second-generation design of the TC91X CMOS chopper-stabilized op-amps with on-chip capacitors. Eliminationof the external capacitors allows the designer to increase reli Microchip
2312 TC913A The TC913 is a monolithic, auto-zeroed operational amplifier. Elimination of the external capacitors allows the designer to increase reliability, lower cost,and simplify design by lowering parts count. Since the TC913 is an auto-zeroing op Microchip
2313 TC913B The TC913 is a monolithic, auto-zeroed operational amplifier. Elimination of the external capacitors allows the designer to increase reliability, lower cost,and simplify design by lowering parts count. Since the TC913 is an auto-zeroing op Microchip
2314 TC962 The TC962 is an advanced version of the industry-standard 7662 high-voltage DC-to-DC converter. Using improved design techniques and CMOS construction, the TC962 can source as much as 80mA versus the 7662 ’s 20mA capability. As an in Microchip
2315 TCA890 AFT-IS for readjustmen of tuner detuning and generation of the tuning voltage Siemens
2316 TCA890 AFT-IS for readjustmen of tuner detuning and generation of the tuning voltage Siemens
2317 TDF2A-1575B-12 SPECIFICATION OF DIELECTRIC FILTER TOKO
2318 TDFM3A-1907E-11 SPECIFICATION OF DIELECTRIC FILTER TOKO
2319 TELEPHONE-SET Evolution of the telephone set SGS-ATES
2320 TERMS Definition of IC terms from National Semiconductor Linear Integrated Circuits Data Book 1975 National Semiconductor
2321 TERMS Definition of Terms - National Semiconductor MOS/LSI Databook 1977 National Semiconductor
2322 TIP100 8A N-P-N darlington power transistor. 60V, 80W, gain of 1000 at 3A. General Electric Solid State
2323 TIP101 8A N-P-N darlington power transistor. 80V, 80W, gain of 1000 at 3A. General Electric Solid State
2324 TIP102 8A N-P-N darlington power transistor. 100V, 80W, gain of 1000 at 3A. General Electric Solid State
2325 TIP110 2A N-P-N darlington power transistor. 60V, 50W, gain of 1000 at 1A. General Electric Solid State
2326 TIP111 2A N-P-N darlington power transistor. 80V, 50W, gain of 1000 at 1A. General Electric Solid State
2327 TIP112 2A N-P-N darlington power transistor. 100V, 50W, gain of 1000 at 1A. General Electric Solid State
2328 TIP115 2A P-N-P darlington power transistor. 60V, 50W, gain of 1000 at 1A. General Electric Solid State
2329 TIP116 2A P-N-P darlington power transistor. 80V, 50W, gain of 1000 at 1A. General Electric Solid State
2330 TIP117 2A P-N-P darlington power transistor. 100V, 50W, gain of 1000 at 1A. General Electric Solid State
2331 TL7460N Dual 4-input expander gate, designed for extending fan-in of the circuits TL7450N and TL7453N respectively AEG-TELEFUNKEN
2332 TLE 6262G Systemintegration of Transceiver and Voltage Regulator Infineon
2333 TS68C000 CMOS version of TS68000, 8/10/12-5 MHz Atmel
2334 TS83102G0BMGS This latest A/D converter is a thermally enhanced, pin-to-pin compatible version of the high-speed TS83102G0B ADC and is designed ... Atmel
2335 U3666M Baseband Delay Line o.o64 ms (Improved Version of U3665M) TEMIC
2336 U5ZA27(Z) ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONICSYSTEM TOSHIBA
2337 U5ZA27C ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONICSYSTEM TOSHIBA
2338 U5ZA40C ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONICSYSTEM TOSHIBA
2339 U5ZA48C ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONICSYSTEM TOSHIBA
2340 U5ZA53C ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEM TOSHIBA


Datasheets found :: 2360
Page: | 74 | 75 | 76 | 77 | 78 | 79 |



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