No. |
Part Name |
Description |
Manufacturer |
2311 |
2N4199 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
2312 |
2N4200 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
2313 |
2N4201 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
2314 |
2N4202 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
2315 |
2N4203 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
2316 |
2N4204 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
2317 |
2N4208 |
PNP switching transistor |
National Semiconductor |
2318 |
2N4209 |
PNP switching transistor |
National Semiconductor |
2319 |
2N4233A |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
2320 |
2N4240 |
NPN Power Transistor Triple Diffused - Fast switching |
SESCOSEM |
2321 |
2N4258 |
PNP switching transistor |
National Semiconductor |
2322 |
2N4258A |
PNP switching transistor |
National Semiconductor |
2323 |
2N4347 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
2324 |
2N4348 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
2325 |
2N4391 |
High-speed switching and chopper N-Channel silicon junction Field-Effect Transistor |
NEC |
2326 |
2N4391 |
JFET SWITCHING N CHANNEL- DEPLETION |
SemeLAB |
2327 |
2N4392 |
High-speed switching and chopper N-Channel silicon junction Field-Effect Transistor |
NEC |
2328 |
2N4392 |
JFET SWITCHING N CHANNEL- DEPLETION |
SemeLAB |
2329 |
2N4393 |
High-speed switching and chopper N-Channel silicon junction Field-Effect Transistor |
NEC |
2330 |
2N4400 |
0.625W Switching NPN Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
2331 |
2N4400 |
Switching NPN transistor |
FERRANTI |
2332 |
2N4400 |
General Purpose NPN Silicon Switching and amplifyng transistor |
ITT Semiconductors |
2333 |
2N4401 |
0.625W Switching NPN Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
2334 |
2N4401 |
Switching NPN transistor |
FERRANTI |
2335 |
2N4401 |
General Purpose NPN Silicon Switching and amplifyng transistor |
ITT Semiconductors |
2336 |
2N4401 |
NPN switching transistor |
Philips |
2337 |
2N4402 |
0.625W Switching PNP Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
2338 |
2N4402 |
Switching PNP transistor |
FERRANTI |
2339 |
2N4402 |
General Purpose PNP Silicon Switching and amplifyng transistor |
ITT Semiconductors |
2340 |
2N4403 |
0.625W Switching PNP Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
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