| No. |
Part Name |
Description |
Manufacturer |
| 2311 |
3N205 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2312 |
3N206 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 2313 |
3N206 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2314 |
3N206 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2315 |
3N207 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2316 |
3N208 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2317 |
3N209 |
N-Channel Dual Gate silicon-nitride passivated MOS Field-Effect Transistor |
Motorola |
| 2318 |
3N209 |
Dual-gate MOSFET UHF communications N-Channel - Depletion |
Motorola |
| 2319 |
3N209 |
N-channel-defletion dual-gate MOSFET UHF communications. |
Motorola |
| 2320 |
3N210 |
N-Channel Dual Gate silicon-nitride passivated MOS Field-Effect Transistor |
Motorola |
| 2321 |
3N211 |
Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion) |
Motorola |
| 2322 |
3N211 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2323 |
3N211 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2324 |
3N212 |
Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion) |
Motorola |
| 2325 |
3N212 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2326 |
3N212 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2327 |
3N213 |
Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion) |
Motorola |
| 2328 |
3N213 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2329 |
3N213 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2330 |
3N214 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2331 |
3N215 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2332 |
3N216 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2333 |
3N217 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2334 |
3PMT5 |
POWERMITE Low Profile 1500 Watt Transient Voltage Suppressor |
Microsemi |
| 2335 |
3SK101 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| 2336 |
3SK102 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| 2337 |
3SK114 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| 2338 |
3SK115 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| 2339 |
3SK121 |
GaAs N-Channel Dual gate MES type |
TOSHIBA |
| 2340 |
3SK126 |
N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS) |
TOSHIBA |
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