No. |
Part Name |
Description |
Manufacturer |
2311 |
KM416V4100BS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
2312 |
KM416V4100BS-L45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
2313 |
KM416V4100BS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
2314 |
KM416V4100BS-L6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
2315 |
KM416V4100CS-45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
2316 |
KM416V4100CS-5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
2317 |
KM416V4100CS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
2318 |
KM416V4100CS-L45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
2319 |
KM416V4100CS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
2320 |
KM416V4100CS-L6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
2321 |
KM416V4104BS-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
2322 |
KM416V4104BS-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
2323 |
KM416V4104BS-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
2324 |
KM416V4104BSL-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
2325 |
KM416V4104BSL-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
2326 |
KM416V4104BSL-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
2327 |
KM416V4104CS-50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
2328 |
KM416V4104CS-60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
2329 |
KM416V4104CS-L45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
2330 |
KM416V4104CS-L50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
2331 |
KM416V4104CS-L60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
2332 |
KM48S8030CT-G_F10 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz |
Samsung Electronic |
2333 |
KM48S8030CT-G_F7 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 143MHz |
Samsung Electronic |
2334 |
KM48S8030CT-G_F8 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz |
Samsung Electronic |
2335 |
KM48S8030CT-G_FH |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz |
Samsung Electronic |
2336 |
KM48S8030CT-G_FL |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz |
Samsung Electronic |
2337 |
KM48S8030DT-G_F8 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz |
Samsung Electronic |
2338 |
KM48S8030DT-G_FA |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz |
Samsung Electronic |
2339 |
KM48S8030DT-G_FH |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz |
Samsung Electronic |
2340 |
KM48S8030DT-G_FL |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz |
Samsung Electronic |
| | | |