| No. |
Part Name |
Description |
Manufacturer |
| 2341 |
AT22V10-20NM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 2342 |
AT22V10-20NM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 2343 |
AT22V10-25DM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 2344 |
AT22V10-25DM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 2345 |
AT22V10-25GM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 2346 |
AT22V10-25GM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 2347 |
AT22V10-25LM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 2348 |
AT22V10-25LM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 2349 |
AT22V10-25NM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 2350 |
AT22V10-25NM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 2351 |
AT27C080-10DC |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2352 |
AT27C080-10DI |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2353 |
AT27C080-10JC |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2354 |
AT27C080-10JI |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2355 |
AT27C080-10PC |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2356 |
AT27C080-10PI |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2357 |
AT27C080-10RC |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2358 |
AT27C080-10RI |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2359 |
AT27C080-10TC |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2360 |
AT27C080-10TI |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2361 |
AT27C080-12DC |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2362 |
AT27C080-12DI |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2363 |
AT27C080-12JC |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2364 |
AT27C080-12JI |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2365 |
AT27C080-12PC |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2366 |
AT27C080-12PI |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2367 |
AT27C080-12RC |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2368 |
AT27C080-12RI |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2369 |
AT27C080-12TC |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 2370 |
AT27C080-12TI |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
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