| No. |
Part Name |
Description |
Manufacturer |
| 2341 |
EL2126CS-T7 |
Ultra-Low Noise/ Low Power/ Wideband Amplifier |
Intersil |
| 2342 |
EL2126CW |
Ultra-low Noise, Low Power, Wideband Amplifier |
Elantec Semiconductor |
| 2343 |
EL2126CW-T7 |
Ultra-Low Noise/ Low Power/ Wideband Amplifier |
Intersil |
| 2344 |
EL2126CW-T7A |
Ultra-Low Noise/ Low Power/ Wideband Amplifier |
Intersil |
| 2345 |
EL5126 |
Reference Voltage Generator, 8-Channel TFT-LCD, VOUT Prog via 10-Bit DAC |
Intersil |
| 2346 |
EL5126 |
Reference Voltage Generator, 8-Channel TFT-LCD, VOUT Prog via 10-Bit DAC |
Intersil |
| 2347 |
ELT3KN126B |
Voltage Step-up Coils - Chip 3KN (Ferrite core type) |
Panasonic |
| 2348 |
ELT3KN126C |
Voltage Step-up Coils - Chip 3KN (Ferrite core type) |
Panasonic |
| 2349 |
EN2042 |
Bipolar Transistor, 20V, 5A, Low VCE(sat), NPN Single TO-126ML |
ON Semiconductor |
| 2350 |
EN2063 |
Bipolar Transistor, (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML |
ON Semiconductor |
| 2351 |
EN2101 |
Bipolar Transistor, (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single TO-126ML |
ON Semiconductor |
| 2352 |
ENA1126 |
RF Transistor, 10V, 30mA, fT=8GHz, NPN Dual MCP6 |
ON Semiconductor |
| 2353 |
ENA1837 |
Bipolar Transistor, 200V, 0.7A, Low VCE(sat), NPN Single TO-126ML |
ON Semiconductor |
| 2354 |
EZPE57126LTB |
Film Capacitors (Automotive, Industrial, Infrastructure) EZPE [Low profile] |
Panasonic |
| 2355 |
EZPQ25126LTA |
Film Capacitors (Automotive, Industrial, Infrastructure) EZPQ |
Panasonic |
| 2356 |
F-126 |
F126 Case Outlines |
IPRS Baneasa |
| 2357 |
F-126 |
F126 Case Outlines |
IPRS Baneasa |
| 2358 |
F100126 |
-4.2 V to -5.7 V, 9-bit backplane driver |
National Semiconductor |
| 2359 |
F126 |
Case dimensions and drawings |
IPRS Baneasa |
| 2360 |
F126 |
Package |
IPRS Baneasa |
| 2361 |
F1260 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2362 |
F126_CASE |
Capsule F 126 shape and dimensions |
IPRS Baneasa |
| 2363 |
F126_CASE |
Capsule F 126 shape and dimensions |
IPRS Baneasa |
| 2364 |
FC126 |
NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) |
SANYO |
| 2365 |
FCAB21260L |
MOSFETs for Lithium-ion Battery Protection |
Panasonic |
| 2366 |
FCH25N60N |
N-Channel SupreMOS� MOSFET 600V, 25A, 126m? |
Fairchild Semiconductor |
| 2367 |
FDN126 |
2-phase variable length 1 to 64-bit dynamic shift registers |
Mullard |
| 2368 |
FDR126Z |
Read only memory, 256-word 10 bits per word |
Mullard |
| 2369 |
FDR126Z1 |
Identical to FDR126Z but with fixed bit pattern to convert from both ASCII to selectric line code and selectric line code to ASCII |
Mullard |
| 2370 |
FDR126Z1 |
Identical to FDR126Z but with fixed bit pattern to convert from both ASCII to selectric line code and selectric line code to ASCII |
Mullard |
| | | |
