| No. |
Part Name |
Description |
Manufacturer |
| 2341 |
2SC3648 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver Applications |
SANYO |
| 2342 |
2SC3649 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications |
SANYO |
| 2343 |
2SC3650 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2344 |
2SC3651 |
High Gain, Low Frequency, General Purpose NPN Amplifier Transistor |
ON Semiconductor |
| 2345 |
2SC3651 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2346 |
2SC3652 |
SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER |
Hitachi Semiconductor |
| 2347 |
2SC3657 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. |
TOSHIBA |
| 2348 |
2SC3658 |
HIGH VOLTAGE,HIGH POWER SWITCHING |
Hitachi Semiconductor |
| 2349 |
2SC3658 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 2350 |
2SC3659 |
HIGH VOLTAGE,HIGH POWER SWITCHING |
Hitachi Semiconductor |
| 2351 |
2SC3660 |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM060C69-28 is also the datasheet of 2SC3660, see the Electrical Characteristics table) |
NEC |
| 2352 |
2SC3660 |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM060C69-28 is also the datasheet of 2SC3660, see the Electrical Characteristics table) |
NEC |
| 2353 |
2SC3660A |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM080C69-28 is also the datasheet of 2SC3660A, see the Electrical Characteristics table) |
NEC |
| 2354 |
2SC3660A |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM080C69-28 is also the datasheet of 2SC3660A, see the Electrical Characteristics table) |
NEC |
| 2355 |
2SC3661 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2356 |
2SC3663 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 2357 |
2SC3663-L |
For amplify high frequency and low noise. |
NEC |
| 2358 |
2SC3663-T1B |
For amplify high frequency and low noise. |
NEC |
| 2359 |
2SC3663-T2B |
For amplify high frequency and low noise. |
NEC |
| 2360 |
2SC3664 |
NPN Triple Diffused Planar Type Darlington Silicon Transistor 400V/20A Driver Applications |
SANYO |
| 2361 |
2SC3665 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER AND DRIVE STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2362 |
2SC3666 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2363 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 2364 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 2365 |
2SC3669 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 2366 |
2SC366G |
Industrial Transistor Specification Table |
TOSHIBA |
| 2367 |
2SC366G |
Silicon NPN epitaxial planar transistor fT=150MHz |
TOSHIBA |
| 2368 |
2SC367 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 2369 |
2SC3670 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2370 |
2SC3671 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
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