| No. |
Part Name |
Description |
Manufacturer |
| 2341 |
IPL10530DAW |
Shortform Catalogue |
etc |
| 2342 |
IR0530CSP |
FlipKY 0.5Amp, 30Volt |
International Rectifier |
| 2343 |
IRC530 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package |
International Rectifier |
| 2344 |
IRF530 |
14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 2345 |
IRF530 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
| 2346 |
IRF530 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 2347 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 2348 |
IRF530 |
Trans MOSFET N-CH 100V 14A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 2349 |
IRF530 |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 2350 |
IRF530 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 2351 |
IRF530 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 2352 |
IRF530 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 2353 |
IRF530 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
| 2354 |
IRF530 |
N-CHANNEL 100V - 0.115 OHM - 14A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET |
ST Microelectronics |
| 2355 |
IRF530 |
100 V,power field effect transistor |
TRANSYS Electronics Limited |
| 2356 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
TRSYS |
| 2357 |
IRF530-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 2358 |
IRF5305 |
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 2359 |
IRF5305 |
Trans MOSFET P-CH 55V 31A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 2360 |
IRF5305L |
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 2361 |
IRF5305LPBF |
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 2362 |
IRF5305PBF |
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 2363 |
IRF5305S |
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2364 |
IRF5305SPBF |
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2365 |
IRF5305STRL |
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2366 |
IRF5305STRR |
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2367 |
IRF530A |
N-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
| 2368 |
IRF530F1 |
Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220FP |
New Jersey Semiconductor |
| 2369 |
IRF530F1 |
N-channel MOSFET, 100V, 9A |
SGS Thomson Microelectronics |
| 2370 |
IRF530FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
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