| No. |
Part Name |
Description |
Manufacturer |
| 2341 |
2SC6076 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2342 |
2SC6078 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2343 |
2SC6124 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2344 |
2SC6125 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2345 |
2SC6126 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2346 |
2SC6127 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2347 |
2SC6140 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2348 |
2SC6142 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2349 |
2SC689H |
Silicon NPN Epitaxial Planar Transistor, intended for use in High Speed Switching |
Hitachi Semiconductor |
| 2350 |
2SC71 |
High-Speed Switching Transistor |
TOSHIBA |
| 2351 |
2SC72 |
High-Speed Switching Transistor |
TOSHIBA |
| 2352 |
2SC752(G)TM |
Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter Applications |
TOSHIBA |
| 2353 |
2SC752G |
Silicon NPN epitaxial planar transistor, ultra high speed switching, computer, countor applications fT=400MHz |
TOSHIBA |
| 2354 |
2SC752GTM |
Ultra High Speed Switching Applications Computer, Counter Applications |
TOSHIBA |
| 2355 |
2SC752TM |
Ultra High Speed Switching Applications Computer, Counter Applications |
TOSHIBA |
| 2356 |
2SC89H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 2357 |
2SC907AH |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 2358 |
2SC907H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 2359 |
2SC90H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 2360 |
2SC91H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 2361 |
2SC945 |
NPN Silicon Transistor(AF amplifier and low speed switching) |
NEC |
| 2362 |
2SC984H |
Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 2363 |
2SD1026 |
Low-speed switching Darlington transistor |
Shindengen |
| 2364 |
2SD1027 |
Low-speed switching Darlington transistor |
Shindengen |
| 2365 |
2SD1049 |
TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED SWITCHING |
Fuji Electric |
| 2366 |
2SD1118 |
TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING |
Fuji Electric |
| 2367 |
2SD1157 |
TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHOING |
Fuji Electric |
| 2368 |
2SD1158 |
TRIPLE DIFFUSED PLANER TYPE HIGH SPPED SWITCHING |
Unknow |
| 2369 |
2SD1176 |
Si NPN triple diffused planar darlington. Medium speed switching. |
Panasonic |
| 2370 |
2SD1176A |
Si NPN triple diffused planar darlington. Medium speed switching. |
Panasonic |
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