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Datasheets for ELECTRO

Datasheets found :: 200109
Page: | 75 | 76 | 77 | 78 | 79 | 80 | 81 | 82 | 83 |
No. Part Name Description Manufacturer
2341 1N4151W-T1 SURFACE MOUNT FAST SWITCHING DIODE Won-Top Electronics
2342 1N4151W-T3 SURFACE MOUNT FAST SWITCHING DIODE Won-Top Electronics
2343 1N4152 30 V, 500 mW high speed diode BKC International Electronics
2344 1N4152 SMALL SIGNAL SWITCHING DIODE Chenyi Electronics
2345 1N4152 SILICON EPITAXIAL PLANAR DIODES GOOD-ARK Electronics
2346 1N4152 SMALL SIGNAL SWITCHING DIODE Shanghai Sunrise Electronics
2347 1N4152 Silicon Diode Whiskerless Transitron Electronic
2348 1N4153 50 V, 500 mW high speed diode BKC International Electronics
2349 1N4153 SMALL SIGNAL SWITCHING DIODE Chenyi Electronics
2350 1N4153 SILICON EPITAXIAL PLANAR DIODES GOOD-ARK Electronics
2351 1N4153 SMALL SIGNAL SWITCHING DIODE Shanghai Sunrise Electronics
2352 1N4153 Silicon Diode Whiskerless Transitron Electronic
2353 1N4153-1 75 V, 500 mW silicon switching diode BKC International Electronics
2354 1N4154 25 V, 500 mW high speed diode BKC International Electronics
2355 1N4154 SMALL SIGNAL SWITCHING DIODE Chenyi Electronics
2356 1N4154 SILICON EPITAXIAL PLANAR DIODES GOOD-ARK Electronics
2357 1N4154 SMALL SIGNAL SWITCHING DIODE Shanghai Sunrise Electronics
2358 1N4154 Silicon Diode Whiskerless Transitron Electronic
2359 1N4154-1 75 V, 500 mW silicon switching diode BKC International Electronics
2360 1N417 60 V, 500 mA, gold bonded germanium diode BKC International Electronics
2361 1N418 60 V, 500 mA, gold bonded germanium diode BKC International Electronics
2362 1N419 80 V, 500 mA, gold bonded germanium diode BKC International Electronics
2363 1N429 Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USAF/JAN Transitron Electronic
2364 1N4305 50 V, 500 mW ultra fast low capacitance diode BKC International Electronics
2365 1N4305 Silicon Diode Whiskerless Transitron Electronic
2366 1N432 Silicon Diode Case Style DO-7 Transitron Electronic
2367 1N434 Silicon Diode Case Style DO-7 Transitron Electronic
2368 1N4370 500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-10% standard tolerance. Jinan Gude Electronic Device
2369 1N4370 Silicon Zener Diode 400 Milliwatt Low Voltage 2.4V Transitron Electronic
2370 1N4370A 500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-5% tolerance. Jinan Gude Electronic Device


Datasheets found :: 200109
Page: | 75 | 76 | 77 | 78 | 79 | 80 | 81 | 82 | 83 |



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