| No. |
Part Name |
Description |
Manufacturer |
| 2341 |
2SC2618 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2342 |
2SC2619 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2343 |
2SC2620 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2344 |
2SC2636 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 2345 |
2SC2647 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 2346 |
2SC2690 |
Use in audio and radio Frequency power amplifiers. |
NEC |
| 2347 |
2SC2690A |
Use in audio and radio Frequency power amplifiers. |
NEC |
| 2348 |
2SC2690A |
Use in audio and radio Frequency power amplifiers. |
NEC |
| 2349 |
2SC2734 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2350 |
2SC2735 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2351 |
2SC2778 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 2352 |
2SC2853 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2353 |
2SC2856 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2354 |
2SC3127 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2355 |
2SC3313 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 2356 |
2SC3314 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 2357 |
2SC3315 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 2358 |
2SC3329 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers |
TOSHIBA |
| 2359 |
2SC3380 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2360 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
| 2361 |
2SC3512 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2362 |
2SC3707 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 2363 |
2SC3804 |
NPN epitaxial planar RF power transistor 13.5V designed for power amplifiers in the 800-900MHz band range |
Mitsubishi Electric Corporation |
| 2364 |
2SC3809 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 2365 |
2SC3810 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 2366 |
2SC3930 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 2367 |
2SC3931 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 2368 |
2SC3936 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 2369 |
2SC4050 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2370 |
2SC4080 |
NPN Bipolar Transistor for HF/Wide Band Amplifiers |
ON Semiconductor |
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