No. |
Part Name |
Description |
Manufacturer |
2341 |
2SB939A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2342 |
2SB940 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2343 |
2SB940A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2344 |
2SB942 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2345 |
2SB942A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2346 |
2SB944 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2347 |
2SB945 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2348 |
2SB946 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2349 |
2SB948 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2350 |
2SB948A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2351 |
2SB949 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2352 |
2SB949A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2353 |
2SB950 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2354 |
2SB950A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2355 |
2SB951 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2356 |
2SB951A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2357 |
2SB952 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2358 |
2SB952A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2359 |
2SB953 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2360 |
2SB953A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2361 |
2SB968 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
2362 |
2SC1424 |
NPN silicon general purpose transistor (This datasheet of the NE73412 is also the datasheet of 2SC1424, see the Electrical Characteristics table) |
NEC |
2363 |
2SC1570 |
VERY LOW NIOSE AMP APPLICATIONS |
SANYO |
2364 |
2SC1571 |
VERY LOW NIOSE AMP APPLICATIONS |
SANYO |
2365 |
2SC1571L |
VERY LOW NIOSE AMP APPLICATIONS |
SANYO |
2366 |
2SC1623 |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
2367 |
2SC1685 |
Low Level and General Purpose Amplifiera |
Micro Electronics |
2368 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
2369 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
2370 |
2SC2107 |
NPN Silicon Epitaxial Transistor, Industrial Use, General Purpose Amplifier and Switches |
NEC |
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