| No. |
Part Name |
Description |
Manufacturer |
| 2371 |
1S6100A |
Silicon power zener diode 100V, ±5% tolerance |
Texas Instruments |
| 2372 |
1S6100R |
Silicon power zener diode 100V, reverse polarity |
Texas Instruments |
| 2373 |
1S6110 |
Silicon power zener diode 110V |
Texas Instruments |
| 2374 |
1S6110A |
Silicon power zener diode 110V, ±5% tolerance |
Texas Instruments |
| 2375 |
1S6110R |
Silicon power zener diode 110V, reverse polarity |
Texas Instruments |
| 2376 |
1S6120 |
Silicon power zener diode 120V |
Texas Instruments |
| 2377 |
1S6120A |
Silicon power zener diode 120V, ±5% tolerance |
Texas Instruments |
| 2378 |
1S6120R |
Silicon power zener diode 120V, reverse polarity |
Texas Instruments |
| 2379 |
1S6130 |
Silicon power zener diode 130V |
Texas Instruments |
| 2380 |
1S6130A |
Silicon power zener diode 130V, ±5% tolerance |
Texas Instruments |
| 2381 |
1S6130R |
Silicon power zener diode 130V, reverse polarity |
Texas Instruments |
| 2382 |
1S6150 |
Silicon power zener diode 150V |
Texas Instruments |
| 2383 |
1S6150A |
Silicon power zener diode 150V, ±5% tolerance |
Texas Instruments |
| 2384 |
1S6150R |
Silicon power zener diode 150V, reverse polarity |
Texas Instruments |
| 2385 |
1S6160 |
Silicon power zener diode 160V |
Texas Instruments |
| 2386 |
1S6160A |
Silicon power zener diode 160V, ±5% tolerance |
Texas Instruments |
| 2387 |
1S6160R |
Silicon power zener diode 160V, reverse polarity |
Texas Instruments |
| 2388 |
1S6180 |
Silicon power zener diode 180V |
Texas Instruments |
| 2389 |
1S6180A |
Silicon power zener diode 180V, ±5% tolerance |
Texas Instruments |
| 2390 |
1S6180R |
Silicon power zener diode 180V, reverse polarity |
Texas Instruments |
| 2391 |
1S6200 |
Silicon power zener diode 200V |
Texas Instruments |
| 2392 |
1S6200A |
Silicon power zener diode 200V, ±5% tolerance |
Texas Instruments |
| 2393 |
1S6200R |
Silicon power zener diode 200V, reverse polarity |
Texas Instruments |
| 2394 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 2395 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 2396 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 2397 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 2398 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 2399 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 2400 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
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