| No. |
Part Name |
Description |
Manufacturer |
| 2371 |
FT2500CL |
Phase Control SCR 2500 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
| 2372 |
FT2500CL-12 |
Phase Control SCR 2500 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
| 2373 |
FT2500CL-16 |
Phase Control SCR 2500 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
| 2374 |
FT2500CL-20 |
Phase Control SCR 2500 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
| 2375 |
FT2500CL-24 |
Phase Control SCR 2500 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
| 2376 |
FT2500CL-4 |
Phase Control SCR 2500 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
| 2377 |
FT2500CL-6 |
Phase Control SCR 2500 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
| 2378 |
FT2500CL-8 |
Phase Control SCR 2500 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
| 2379 |
G121C00P00C |
Liquid crystal display module |
Epson Company |
| 2380 |
G121C00P00C |
LIQUID CRYSTAL DISPLAY MODULE |
Seiko Instruments Inc |
| 2381 |
G121CB1P00C |
Liquid crystal display module |
Epson Company |
| 2382 |
G121CB1P00C |
LIQUID CRYSTAL DISPLAY MODULE |
Seiko Instruments Inc |
| 2383 |
G648D00C000 |
Liquid crystal display module |
Epson Company |
| 2384 |
G648D00C000 |
LIQUID CRYSTAL DISPLAY MODULE�� |
Seiko Instruments Inc |
| 2385 |
GAO100C-1D |
Gallium arsenide GUNN element |
Siemens |
| 2386 |
GAO100C-1D |
Gallium arsenide GUNN element |
Siemens |
| 2387 |
GAO200C-1E |
Gallium arsenide GUNN element |
Siemens |
| 2388 |
GAO200C-1E |
Gallium arsenide GUNN element |
Siemens |
| 2389 |
GC100C |
Germanium PNP Transistor |
RFT |
| 2390 |
GM71C17400C |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 2391 |
GM71C17400CJ |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 2392 |
GM71C17400CJ-5 |
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns |
Hynix Semiconductor |
| 2393 |
GM71C17400CJ-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
| 2394 |
GM71C17400CJ-7 |
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns |
Hynix Semiconductor |
| 2395 |
GM71C17400CLJ-5 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 2396 |
GM71C17400CLJ-6 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 2397 |
GM71C17400CLJ-7 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 2398 |
GM71C17400CLT-5 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 2399 |
GM71C17400CLT-6 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 2400 |
GM71C17400CLT-7 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
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