No. |
Part Name |
Description |
Manufacturer |
2371 |
2SC1384 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
2372 |
2SC1393 |
Transistors TV VHF TUNER RF AMPLIFIER(FORWARD AGC) |
USHA India LTD |
2373 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
2374 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
2375 |
2SC1454 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
2376 |
2SC1473 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
2377 |
2SC1473A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
2378 |
2SC1506 |
NPN silicon triple diffused transistor, color TV chroma and sound output amplifiers |
NEC |
2379 |
2SC1507 |
NPN silicon triple diffused transistor, color TV chroma and sound output amplifiers |
NEC |
2380 |
2SC1509 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
2381 |
2SC1514 |
HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER TV VIDEO OUTPUT |
Hitachi Semiconductor |
2382 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
2383 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
2384 |
2SC154H |
Silicon NPN Triple Diffused LPT Transistor, intended for use in Wide Band Amplifier, High Voltage Switching |
Hitachi Semiconductor |
2385 |
2SC1573 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
2386 |
2SC1573A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
2387 |
2SC1573B |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
2388 |
2SC1622 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
2389 |
2SC1622A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
2390 |
2SC1622A-L |
Low-frequency high-gain amplification silicon Tr. |
NEC |
2391 |
2SC1622A-T1B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
2392 |
2SC1622A-T2B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
2393 |
2SC1623 |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
2394 |
2SC1623R |
NPN silicon epitaxial transistor, audio frequency and 455kHz IF amplifier |
NEC |
2395 |
2SC1627 |
Transistor Silicon NPN Epitaxial Type (PCT process) Driver Stage Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
2396 |
2SC1627 |
Transistor Silicon NPN Epitaxial Type (PCT process) Driver Stage Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
2397 |
2SC1627A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
2398 |
2SC1627A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
2399 |
2SC1672 |
Medium Power Amplifiers and Switches |
Unknow |
2400 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
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