| No. |
Part Name |
Description |
Manufacturer |
| 2371 |
CM800HB-50H |
HIGH POWER SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 2372 |
CM800HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 2373 |
CM800HB-66H |
HIGH POWER SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 2374 |
CM900HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 2375 |
CMFD2004I |
DUAL ISOLATED HIGH VOLTAGE SWITCHING DIODES |
Central Semiconductor |
| 2376 |
CMFSH3I |
DUAL ISOLATED SCHOTTKY DIODES |
Central Semiconductor |
| 2377 |
CMKD6263 |
ULTRAmini. TRIPLE ISOLATED HIGH VOLTAGE SCHOTTKY DIODE |
Central Semiconductor |
| 2378 |
CMLSH-4 |
SURFACE MOUNT PICOmini DUAL, ISOLATED SILICON SCHOTTKY DIODES |
Central Semiconductor |
| 2379 |
CMXD2004 |
SUPER-MINI TRIPLE ISOLATED SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE |
Central Semiconductor |
| 2380 |
CMXD2004TO |
SUPERminiTM TRIPLE ISOLATED OPPOSING SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE |
Central Semiconductor |
| 2381 |
CMXD4448 |
SUPER-MINI TRIPLE ISOLATED SURFACE MOUNT HIGH SPEED SWITCHING DIODE |
Central Semiconductor |
| 2382 |
CMXD6001 |
SUPERmini. TRIPLE ISOLATED SURFACE MOUNT LOW LEAKAGE SWITCHING DIODE |
Central Semiconductor |
| 2383 |
CMXSH-3 |
SUPER-MINI TRIPLE ISOLATED SURFACE MOUNT SCHOTTKY SWITCHING DIODE |
Central Semiconductor |
| 2384 |
CN410899 |
POW-R-BLOK Dual & Single Diode Isolated Module 100 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
| 2385 |
CN411299 |
POW-R-BLOK Dual & Single Diode Isolated Module 100 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
| 2386 |
CN411699 |
POW-R-BLOK Dual & Single Diode Isolated Module 100 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
| 2387 |
CN610816 |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
| 2388 |
CN610816A |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
| 2389 |
CN611216 |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
| 2390 |
CN611216A |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
| 2391 |
CN611416 |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
| 2392 |
CN611416A |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
| 2393 |
CN611616 |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
| 2394 |
CN611616A |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
| 2395 |
CPL-WB-02D3 |
Wide-band, directional coupler with integrated 50 ohm loaded isolated port |
ST Microelectronics |
| 2396 |
CQ220I-8 |
ISOLATED TAB TRIAC 8.0 AMP 200 THRU 800 VOLTS |
Central Semiconductor |
| 2397 |
CR03AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 2398 |
CR05AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 2399 |
CR08AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 2400 |
CR10C |
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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