| No. |
Part Name |
Description |
Manufacturer |
| 2371 |
FGR4000HX-90DS |
Reverse-condition GTO thyristor for high power inverter use press pack type |
Mitsubishi Electric Corporation |
| 2372 |
FLM15_100 |
Midget, time-delay fuse. Supplementary overcurrent protection. Ampere rating: 15/100 A. Voltage rating: 250 VAC. Interrupting rating: AC: 10,000 A rms symmetrical. |
Littelfuse |
| 2373 |
FLQ15_100 |
Midget, time-delay fuse. Supplementary overcurrent protection. Ampere rating: 15/100 A. Voltage rating: 500 VAC. Interrupting rating: 10,000 A rms symmetrical. |
Littelfuse |
| 2374 |
FLU011 |
Supplementary Overcurrent Protection |
Littelfuse |
| 2375 |
FPF1320 |
IntelliMAX� Dual-Input Single-Output Advanced Power Switch with True Reverse-Current Blocking |
Fairchild Semiconductor |
| 2376 |
FPF1321 |
IntelliMAX� Dual-Input Single-Output Advanced Power Switch with True Reverse-Current Blocking |
Fairchild Semiconductor |
| 2377 |
FS2028 |
10 BASE-T LOW PASS FILTER TRANSMITTER & RECEIVER WITH COMMON CHOKES |
etc |
| 2378 |
FS7140 |
Programmable Phase-Locked Loop Clock Generator |
ON Semiconductor |
| 2379 |
FS8107E |
Low Power Phase-Locked Loop IC |
etc |
| 2380 |
GLT4160L04SE-40J3 |
40ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 2381 |
GLT4160L04SE-40TC |
40ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 2382 |
GLT4160L04SE-50J3 |
50ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 2383 |
GLT4160L04SE-50TC |
50ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 2384 |
GLT4160L04SE-60J3 |
60ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 2385 |
GLT4160L04SE-60TC |
60ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 2386 |
GLT4160L04SE-70J3 |
70ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 2387 |
GLT4160L04SE-70TC |
70ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 2388 |
GS121 |
Slow germanium PNP switching transistor with high base-emitter voltage strength, suitable for use in calculating machines |
RFT |
| 2389 |
GS122 |
Slow germanium PNP switching transistor with high base-emitter voltage strength, suitable for use in calculating machines |
RFT |
| 2390 |
H1012 |
10/100 BASE-T SINGLE PORT TRANSFORMER MODULES |
Pulse Engineering |
| 2391 |
H1019 |
10/100 BASE-T SINGLE PORT TRANSFORMER MODULES |
Pulse Engineering |
| 2392 |
H1042 |
10/100 BASE-T SINGLE PORT TRANSFORMER MODULES |
Pulse Engineering |
| 2393 |
H1086 |
10/100 BASE-T SINGLE PORT TRANSFORMER MODULES |
Pulse Engineering |
| 2394 |
H1089 |
10/100 BASE-T SINGLE PORT TRANSFORMER MODULES |
Pulse Engineering |
| 2395 |
H1117 |
10/100 BASE-T SINGLE PORT TRANSFORMER MODULES |
Pulse Engineering |
| 2396 |
H1138 |
10/100 BASE-T SINGLE PORT TRANSFORMER MODULES |
Pulse Engineering |
| 2397 |
HBC4046A |
Micropower phase-locked loop |
SGS-ATES |
| 2398 |
HBCU-5710R |
HBCU-5710R · 1000BASE-T Small Form Factor Pluggable Transceiver |
Agilent (Hewlett-Packard) |
| 2399 |
HBF4046A |
Micropower phase-locked loop |
SGS-ATES |
| 2400 |
HC2509C |
Phase-Locked Loop Clock Distribution for Synchronous DRAM Applications |
Hynix Semiconductor |
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