No. |
Part Name |
Description |
Manufacturer |
2371 |
MDC3237T1-D |
Integrated Dual Inductive Load Driver |
ON Semiconductor |
2372 |
MDC3238T1-D |
Integrated Dual Inductive Load Driver |
ON Semiconductor |
2373 |
MDP14 |
Dual Inline Package, Molded DIP, 01, 03, 05 Schematics, Rugged, Molded Case Construction, Highly Stable, Automatic Insert Compatible, Uniform Performance Characteristics, Available in Tube Pack |
Vishay |
2374 |
MDP16 |
Dual Inline Package, Molded DIP, 01, 03, 05 Schematics, Rugged, Molded Case Construction, Highly Stable, Automatic Insert Compatible, Uniform Performance Characteristics, Available in Tube Pack |
Vishay |
2375 |
MDP16-45 |
Dual Inline Package, Molded DIP, Rugged, Molded Case Construction, Highly Stable, Automatic Insert Compatible, Available in Tube Pack, Reduces Assembly Costs |
Vishay |
2376 |
MDP16-46 |
Dual Inline Package, Molded DIP, Rugged, Molded Case Construction, Highly Stable, Automatic Insert Compatible, Available in Tube Pack, Reduces Assembly Costs |
Vishay |
2377 |
MDRC |
Dual Inline Package, Molded DIP, 16 Pin, Rugged, Molded Case Construction, Highly Stable, Automatic Insert Compatible, Reduces Assembly Costs |
Vishay |
2378 |
MICROCOMPUTER I/O SYSTEMS |
Introduction, Selection Guide, Glossary of Terms and Definitions |
Burr Brown |
2379 |
MKT 1802 |
EIA standard chip sizes, Exellent thermal shock resistance, No piezoelectric effect, Nonpolar construction, Tape and Reel packaging supplied in hermetically sealed bags, Open construction |
Vishay |
2380 |
MKT 1802 |
EIA standard chip sizes, Exellent thermal shock resistance, No piezoelectric effect, Nonpolar construction, Tape and Reel packaging supplied in hermetically sealed bags, Open construction |
Vishay |
2381 |
ML87V2104 |
Video Signal Noise Reduction and Field Rate Conversion IC with a Built-in 4M Bit Field Memory |
OKI electronic componets |
2382 |
MLX10402 |
The IC drives directly small DC inductive or active loads like electric motors, lamps, etc |
Melexis |
2383 |
MOSPOWER |
Introduction to MOSPOWER, ratings and characteristics |
Siliconix |
2384 |
MOUNTING |
Mounting instructions for plastic plug-in package, flat-pack, package 5H8 DIN 41873, MOS ICs |
Siemens |
2385 |
MP4005 |
Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
2386 |
MP4006 |
Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
2387 |
MP4009 |
Power Transistor Module Silicon PNP Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching. |
TOSHIBA |
2388 |
MP4013 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
2389 |
MP4015 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching. |
TOSHIBA |
2390 |
MP4020 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
2391 |
MP4021 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
2392 |
MP4024 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
2393 |
MP4025 |
Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1) High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching |
TOSHIBA |
2394 |
MP4101 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching. |
TOSHIBA |
2395 |
MP4104 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
2396 |
MP4208 |
Power MOS FET Module Silicon P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
2397 |
MP4301 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
2398 |
MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
2399 |
MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
2400 |
MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
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