| No. |
Part Name |
Description |
Manufacturer |
| 2371 |
2N5039 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 2372 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
| 2373 |
2N5114 |
P-Channel switching FET |
National Semiconductor |
| 2374 |
2N5115 |
P-Channel switching FET |
National Semiconductor |
| 2375 |
2N5116 |
P-Channel switching FET |
National Semiconductor |
| 2376 |
2N5142 |
Switching Transistors |
Central Semiconductor |
| 2377 |
2N5189 |
High-Voltage Silicon NPN Switching Transistor |
RCA Solid State |
| 2378 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2379 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2380 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2381 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2382 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2383 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2384 |
2N5224 |
General Purpose NPN Silicon Low-level Switching transistor |
ITT Semiconductors |
| 2385 |
2N5228 |
General purpose PNP silicon low-level switching transistor |
ITT Semiconductors |
| 2386 |
2N525 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 2387 |
2N526 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 2388 |
2N5262 |
Silicon NPN High-Speed Switching Transistor |
RCA Solid State |
| 2389 |
2N527 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 2390 |
2N5294 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM132 |
SESCOSEM |
| 2391 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 2392 |
2N5296 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM133 |
SESCOSEM |
| 2393 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 2394 |
2N5298 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM134 |
SESCOSEM |
| 2395 |
2N5320 |
SWITCHING TRANSISTORS (NPN SILICON) |
Boca Semiconductor Corporation |
| 2396 |
2N5320 |
10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. |
Continental Device India Limited |
| 2397 |
2N5321 |
SWITCHING TRANSISTORS (NPN SILICON) |
Boca Semiconductor Corporation |
| 2398 |
2N5321 |
10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 2399 |
2N5322 |
SWITCHING TRANSISTORS (PNP SILICON) |
Boca Semiconductor Corporation |
| 2400 |
2N5323 |
SWITCHING TRANSISTORS (PNP SILICON) |
Boca Semiconductor Corporation |
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