| No. |
Part Name |
Description |
Manufacturer |
| 23761 |
K6R1008C1C-TC15 |
128K x 8 high speed static RAM, 5V operating, 15ns |
Samsung Electronic |
| 23762 |
K6R1008C1C-TI10 |
128K x 8 high speed static RAM, 5V operating, 10ns |
Samsung Electronic |
| 23763 |
K6R1008C1C-TI12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
| 23764 |
K6R1008C1C-TI15 |
128K x 8 high speed static RAM, 5V operating, 15ns |
Samsung Electronic |
| 23765 |
K6R1008C1D |
128K x 8 Bit High-Speed CMOS Static RAM(5.0V Operating) Data Sheet |
Samsung Electronic |
| 23766 |
K6R1008V1B |
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
Samsung Electronic |
| 23767 |
K6R1008V1B-B-L |
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
Samsung Electronic |
| 23768 |
K6R1008V1B-B-P |
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
Samsung Electronic |
| 23769 |
K6R1008V1B-C-L |
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
Samsung Electronic |
| 23770 |
K6R1008V1B-C10 |
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
Samsung Electronic |
| 23771 |
K6R1008V1B-C12 |
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
Samsung Electronic |
| 23772 |
K6R1008V1B-C8 |
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
Samsung Electronic |
| 23773 |
K6R1008V1B-I-P |
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
Samsung Electronic |
| 23774 |
K6R1008V1B-I10 |
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
Samsung Electronic |
| 23775 |
K6R1008V1B-I12 |
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
Samsung Electronic |
| 23776 |
K6R1008V1B-I8 |
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
Samsung Electronic |
| 23777 |
K6R1008V1D |
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet |
Samsung Electronic |
| 23778 |
K6R1016V1D |
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet |
Samsung Electronic |
| 23779 |
K6R3024V1D |
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet |
Samsung Electronic |
| 23780 |
K6R3024V1D-HC09 |
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
Samsung Electronic |
| 23781 |
K6R3024V1D-HC10 |
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
Samsung Electronic |
| 23782 |
K6R3024V1D-HC12 |
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
Samsung Electronic |
| 23783 |
K6R3024V1D-HI09 |
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
Samsung Electronic |
| 23784 |
K6R3024V1D-HI10 |
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
Samsung Electronic |
| 23785 |
K6R3024V1D-HI12 |
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
Samsung Electronic |
| 23786 |
K6T1008C2C-B |
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 23787 |
K6T1008C2C-DB55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 23788 |
K6T1008C2C-DB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 23789 |
K6T1008C2C-DL55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 23790 |
K6T1008C2C-DL70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| | | |
