| No. |
Part Name |
Description |
Manufacturer |
| 2401 |
CHA3092 |
20-33GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2402 |
CHA3092-99F/00 |
20-33GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2403 |
CHA3092RBF |
20-33GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2404 |
CHA3092RBF/24 |
20-33GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2405 |
CHA3093C |
20-40GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2406 |
CHA3093C99F/00 |
20-40GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2407 |
CHA5215A |
5.8GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2408 |
CHA5215A99F/00 |
5.8GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2409 |
CHA5215AFKF/23 |
5.8GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2410 |
CHA5290 |
17.7-24GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2411 |
CHA5290-99F/00 |
17.7-24GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2412 |
CHA5292A |
37-40GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2413 |
CHA5292A-99F/00 |
37-40GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2414 |
CHA5390 |
24-30GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2415 |
CHA5390-99F |
24-30GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2416 |
CHA5390TBF |
24-30GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2417 |
CHA5390TBF/24 |
24-30GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2418 |
CJF122 |
30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 2000 hFE. |
Continental Device India Limited |
| 2419 |
CJF127 |
30.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 2000 hFE. |
Continental Device India Limited |
| 2420 |
CJF15028 |
36.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 2421 |
CJF15029 |
36.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 8.000A Ic, 20 hFE. Complementary CJF15028 |
Continental Device India Limited |
| 2422 |
CJF15030 |
36.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 2423 |
CJF15031 |
36.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 40 hFE. |
Continental Device India Limited |
| 2424 |
CJF15032 |
50.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 2.000A Ic, 50 hFE. |
Continental Device India Limited |
| 2425 |
CJF15033 |
50.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 2.000A Ic, 50 hFE. |
Continental Device India Limited |
| 2426 |
CJF2955 |
30.000W Medium Power PNP Plastic Leaded Transistor. 90V Vceo, 10.000A Ic, 5 hFE. |
Continental Device India Limited |
| 2427 |
CJF3055 |
30.000W Medium Power NPN Plastic Leaded Transistor. 90V Vceo, 10.000A Ic, 5 hFE. |
Continental Device India Limited |
| 2428 |
CJF6107 |
34.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 5 hFE. |
Continental Device India Limited |
| 2429 |
CJF6388 |
40.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 10.000A Ic, 100 hFE. |
Continental Device India Limited |
| 2430 |
CM10MD-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
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