| No. |
Part Name |
Description |
Manufacturer |
| 2401 |
GS8322Z18 |
36Mb NBT SRAMs |
GSI Technology |
| 2402 |
GS8322ZV18 |
36Mb NBT SRAMs |
GSI Technology |
| 2403 |
GS84018 |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
GSI Technology |
| 2404 |
GS84018 |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
GSI Technology |
| 2405 |
GS864018 |
72Mb Burst SRAMs |
GSI Technology |
| 2406 |
GS8640V18 |
72Mb Burst SRAMs |
GSI Technology |
| 2407 |
GS8640Z18 |
72Mb NBT SRAMs |
GSI Technology |
| 2408 |
GS8640ZV18 |
72Mb NBT SRAMs |
GSI Technology |
| 2409 |
GS864118 |
72Mb Burst SRAMs |
GSI Technology |
| 2410 |
GS8641V18 |
72Mb Burst SRAMs |
GSI Technology |
| 2411 |
GS8641Z18 |
72Mb NBT SRAMs |
GSI Technology |
| 2412 |
GS8641ZV18 |
72Mb NBT SRAMs |
GSI Technology |
| 2413 |
GS864218 |
72Mb Burst SRAMs |
GSI Technology |
| 2414 |
GS8642V18 |
72Mb Burst SRAMs |
GSI Technology |
| 2415 |
GS8642Z18 |
72Mb NBT SRAMs |
GSI Technology |
| 2416 |
GS8642ZV18 |
72Mb NBT SRAMs |
GSI Technology |
| 2417 |
GS864418 |
72Mb Burst SRAMs |
GSI Technology |
| 2418 |
GS8644V18 |
72Mb Burst SRAMs |
GSI Technology |
| 2419 |
GS8644Z18 |
72Mb NBT SRAMs |
GSI Technology |
| 2420 |
GS8644ZV18 |
72Mb NBT SRAMs |
GSI Technology |
| 2421 |
GSD2004A-GS18 |
Dual Common-Anode Small-Signal High-Voltage Switching Diode |
Vishay |
| 2422 |
GZ18 |
Zener Diodes |
General Semiconductor |
| 2423 |
GZB18 |
1.0W Zener Diodes |
SANYO |
| 2424 |
H118 |
Hex inverter (active pull-up) |
SGS-ATES |
| 2425 |
H118 |
Hex inverter (active pull-up), standard temperature range |
SGS-ATES |
| 2426 |
H118 |
Hex inverter (active pull-up), intermediate temperature range |
SGS-ATES |
| 2427 |
H118 |
Hex inverter active pull-up output |
SGS-ATES |
| 2428 |
H1601-18 |
High Voltage, Fast Recovery Medium Current Rectifier |
etc |
| 2429 |
H18 |
Outline Drawings |
Mitsubishi Electric Corporation |
| 2430 |
H1N5818 |
1.0AMP.SCHOTTKY BARRIER RECTIFIERS |
Hi-Sincerity Microelectronics |
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