| No. |
Part Name |
Description |
Manufacturer |
| 2401 |
AWT6301 |
The AWT6301 meets the increasing demands for higher efficiency and linearity in AMPS/CDMA 1X handsets, while reducing pcb area by ... |
Anadigics Inc |
| 2402 |
AWT6301 |
The AWT6301 meets the increasing demands for higher efficiency and linearity in AMPS/CDMA 1X handsets, while reducing pcb area by ... |
Anadigics Inc |
| 2403 |
BA301 |
MONOLITAIC ICs |
ROHM |
| 2404 |
BA6301 |
FG system speed servo controller |
ROHM |
| 2405 |
BA6301F |
FG system speed servo controller |
ROHM |
| 2406 |
BAV301 |
SWITCHING DIODES |
Micro Commercial Components |
| 2407 |
BAV301 |
120 V, surface mount switchig diode |
TRANSYS Electronics Limited |
| 2408 |
BAV301 |
120 V, surface mount switching diode |
TRSYS |
| 2409 |
BAV301 |
Switching Diode |
Vishay |
| 2410 |
BB301 |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 2411 |
BB301C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 2412 |
BB301C |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
| 2413 |
BB301C |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 2414 |
BB301M |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
| 2415 |
BB301M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 2416 |
BB301M |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 2417 |
BC301 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2418 |
BC301 |
0.850W General Purpose NPN Metal Can Transistor. 60V Vceo, 0.500A Ic, 40 - 240 hFE. |
Continental Device India Limited |
| 2419 |
BC301 |
NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 2420 |
BC301 |
NPN silicon epitaxial planar transistor |
Mikroelektronikai Vallalat |
| 2421 |
BC301 |
Silicon planar NPN medium power transistor |
SGS-ATES |
| 2422 |
BC301 |
Transistor, medium power audio amplifiers |
SGS-ATES |
| 2423 |
BC301 |
Epitaxial NPN silicon planar transistor |
TUNGSRAM |
| 2424 |
BC301-4 |
0.850W General Purpose NPN Metal Can Transistor. 60V Vceo, 0.500A Ic, 40 - 80 hFE. |
Continental Device India Limited |
| 2425 |
BC301-4 |
Epitaxial NPN silicon planar transistor |
TUNGSRAM |
| 2426 |
BC301-5 |
0.850W General Purpose NPN Metal Can Transistor. 60V Vceo, 0.500A Ic, 70 - 140 hFE. |
Continental Device India Limited |
| 2427 |
BC301-5 |
Epitaxial NPN silicon planar transistor |
TUNGSRAM |
| 2428 |
BC301-6 |
0.850W General Purpose NPN Metal Can Transistor. 60V Vceo, 0.500A Ic, 120 - 240 hFE. |
Continental Device India Limited |
| 2429 |
BC301-6 |
Epitaxial NPN silicon planar transistor |
TUNGSRAM |
| 2430 |
BCM94301 |
802.11b Client Reference Design |
Broadcom |
| | | |
