| No. |
Part Name |
Description |
Manufacturer |
| 2401 |
TIL191B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 2402 |
TIL192 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 2403 |
TIL192A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 2404 |
TIL192B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 2405 |
TIL193 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 2406 |
TIL193A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 2407 |
TIL193B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 2408 |
TIL318 |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 2409 |
TIL31B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 2410 |
TIL33B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 2411 |
TIL34B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 2412 |
TLP580 |
(TLP581) GaAlAs Infrared Emitting Diode and NPN Silicon Photo Transistor |
TOSHIBA |
| 2413 |
TLR101 |
GaP Light-Emitting diode |
TOSHIBA |
| 2414 |
TLR102 |
GaP Light-Emitting diode |
TOSHIBA |
| 2415 |
TLR103 |
GaP Light-Emitting diode |
TOSHIBA |
| 2416 |
TLR104 |
GaP Light-Emitting diode, panel Circuit Indicator and Logic Circuit Condition Indicator |
TOSHIBA |
| 2417 |
TOX9000 |
1 V, gallium aluminum arsenide light emitting diode |
Texas Instruments |
| 2418 |
TOX9002 |
1 V, gallium aluminum arsenide light emitting diode |
Texas Instruments |
| 2419 |
TOX9004 |
3 V, gallium aluminum arsenide infrared-emitting diode |
Texas Instruments |
| 2420 |
TOX9005 |
2 V, P-N gallium arsenide infrared-emitting diode |
Texas Instruments |
| 2421 |
TOX9006 |
3 V, gallium aluminum arsenide infrared-emitting diode |
Texas Instruments |
| 2422 |
TOX9007 |
2 V, P-N gallium arsenide infrared-emitting diode |
Texas Instruments |
| 2423 |
TSAL4400 |
GaAs/GaAlAs IR Emitting Diode in ∅ 3 mm (T-1) Package |
Vishay |
| 2424 |
TSAL5100 |
GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm (T-1¾) Package |
Vishay |
| 2425 |
TSAL5300 |
GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm (T-1¾) Package |
Vishay |
| 2426 |
TSAL6100 |
GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm (T-1¾) Package |
Vishay |
| 2427 |
TSAL6200 |
GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm (T-1¾) Package |
Vishay |
| 2428 |
TSAL6400 |
GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm (T-1¾) Package |
Vishay |
| 2429 |
TSAL7200 |
GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm (T-1¾) Package |
Vishay |
| 2430 |
TSAL7300 |
GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm (T-1¾) Package |
Vishay |
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