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Datasheets for HE

Datasheets found :: 16344
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No. Part Name Description Manufacturer
2401 AKBP204 AVALANCHE BRIDGE RECTIFIERS EIC discrete Semiconductors
2402 AKBP206 AVALANCHE BRIDGE RECTIFIERS EIC discrete Semiconductors
2403 AKBP208 AVALANCHE BRIDGE RECTIFIERS EIC discrete Semiconductors
2404 AKBP210 AVALANCHE BRIDGE RECTIFIERS EIC discrete Semiconductors
2405 AKBPC3502 35AMP controlled avalanche silicon bridge rectifier COLLMER SEMICONDUCTOR INC
2406 AKBPC3502 35 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER Fuji Electric
2407 AKBPC3503 35 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER Fuji Electric
2408 AKBPC3504 35AMP controlled avalanche silicon bridge rectifier COLLMER SEMICONDUCTOR INC
2409 AKBPC3504 35 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER Fuji Electric
2410 AKBPC3505 35 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER Fuji Electric
2411 AKBPC3506 35 AMP controlled avalanche silicon bridge rectifier COLLMER SEMICONDUCTOR INC
2412 AKBPC3506 35 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER Fuji Electric
2413 AKBPC3507 35 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER Fuji Electric
2414 AKBPC3508 35 AMP controlled avalanche silicon bridge rectifier COLLMER SEMICONDUCTOR INC
2415 AKBPC3508 35 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER Fuji Electric
2416 AKBPC602 6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER Fuji Electric
2417 AKBPC603 6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER Fuji Electric
2418 AKBPC604 6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER Fuji Electric
2419 AKBPC605 6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER Fuji Electric
2420 AKBPC606 6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER Fuji Electric
2421 AKBPC607 6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER Fuji Electric
2422 AKBPC608 6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER Fuji Electric
2423 AM0608-020 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz SGS Thomson Microelectronics
2424 AM0608-070 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics SGS Thomson Microelectronics
2425 AM1416-001 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
2426 AM1416-003 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
2427 AM1517-035 High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems SGS Thomson Microelectronics
2428 AM2520SYC03 The Super Bright Yellow source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. Kingbright Electronic
2429 AM29DL320GB120 For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path. Advanced Micro Devices
2430 AM29DL320GB70 For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path. Advanced Micro Devices


Datasheets found :: 16344
Page: | 77 | 78 | 79 | 80 | 81 | 82 | 83 | 84 | 85 |



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