| No. |
Part Name |
Description |
Manufacturer |
| 2401 |
2N2222ADCSM |
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2402 |
2N2222ADCSM |
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2403 |
2N2222AXCSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
| 2404 |
2N2222B |
NPN Transistor Medium Power, low noise, high breakdown voltage, low saturation voltage |
Amelco Semiconductor |
| 2405 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
| 2406 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
| 2407 |
2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
| 2408 |
2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
| 2409 |
2N2297 |
NPN Transistor Medium Power, high collector current |
Amelco Semiconductor |
| 2410 |
2N2297 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 2411 |
2N2297 |
High frequency transistor |
mble |
| 2412 |
2N2297 |
High frequency transistor |
mble |
| 2413 |
2N2297 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 2414 |
2N2330 |
SEPT® NPN epitaxial planar silicon high-speed transistor for choppers |
Sprague |
| 2415 |
2N2331 |
SEPT® NPN epitaxial planar silicon high-speed transistor for choppers |
Sprague |
| 2416 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 2417 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 2418 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 2419 |
2N2368 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 2420 |
2N2368 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 2421 |
2N2368 |
Transistor, high speed saturated switches |
SGS-ATES |
| 2422 |
2N2369 |
NPN high speed saturated switch. |
Fairchild Semiconductor |
| 2423 |
2N2369 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
| 2424 |
2N2369 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 2425 |
2N2369 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 2426 |
2N2369 |
HIGH-FREQUENCY SATURATED SWITCH |
SGS Thomson Microelectronics |
| 2427 |
2N2369 |
Transistor, high speed saturated switches |
SGS-ATES |
| 2428 |
2N2369 |
HIGH-FREQUENCY SATURATED SWITCH |
ST Microelectronics |
| 2429 |
2N2369A |
NPN high speed saturated switch. |
Fairchild Semiconductor |
| 2430 |
2N2369A |
NPN silicon epitaxial transistor for high-speed range of 10-100 mAdc switching applications |
Motorola |
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