| No. |
Part Name |
Description |
Manufacturer |
| 2401 |
2SC184 |
Transistors AM FREQUENCY CONVERTER IF AMPLIFIER |
USHA India LTD |
| 2402 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 2403 |
2SC1851 |
Medium Power Amplifiers and Switches |
Unknow |
| 2404 |
2SC1890A |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2405 |
2SC1906 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2406 |
2SC1907 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2407 |
2SC1921 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2408 |
2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications |
TOSHIBA |
| 2409 |
2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications |
TOSHIBA |
| 2410 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
| 2411 |
2SC1959 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 2412 |
2SC1959 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 2413 |
2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
Mitsubishi Electric Corporation |
| 2414 |
2SC1980 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 2415 |
2SC2001 |
Medium Power Amplifiers and Switches |
Unknow |
| 2416 |
2SC2063 |
RF Amplifier Epitaxial Planar NPN Silicon Transistors |
ROHM |
| 2417 |
2SC2073 |
Silicon NPN triple diffused power transistor, power amplifier, vertical output applications |
TOSHIBA |
| 2418 |
2SC2073A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS |
TOSHIBA |
| 2419 |
2SC2076 |
Si NPN epitaxial planar. RF amplifier. |
Panasonic |
| 2420 |
2SC2078 |
NPN Epitaxial Planar Silicon Transistor 27MHz RF Power Amplifier Applications |
SANYO |
| 2421 |
2SC2091 |
HIGH FREQUENCY POWER AMPLIFIER |
Unknow |
| 2422 |
2SC2092 |
HIGH FREQUENCY POWER AMPLIFIER |
Unknow |
| 2423 |
2SC2098 |
Silicon NPN epitaxial planar transistor, Citizen band and HAM band up to 50MHz RF power amplifier applications |
TOSHIBA |
| 2424 |
2SC2099 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS) (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 2425 |
2SC2101 |
Silicon NPN epitaxial planar transistor, VHF band power amplifier applications |
TOSHIBA |
| 2426 |
2SC2107 |
NPN Silicon Epitaxial Transistor, Industrial Use, General Purpose Amplifier and Switches |
NEC |
| 2427 |
2SC2120 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Power Amplifier Applications |
TOSHIBA |
| 2428 |
2SC2148 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 2429 |
2SC2149 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 2430 |
2SC2153 |
Si NPN planar. RF amplifier. |
Panasonic |
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