| No. |
Part Name |
Description |
Manufacturer |
| 2401 |
1004MP |
4 W, 35 V, 960-1215 MHz common base transistor |
GHz Technology |
| 2402 |
100BGQ015 |
15V 100A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
| 2403 |
100BGQ015J |
15V 100A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
| 2404 |
100BGQ030 |
30V 100A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
| 2405 |
100BGQ030J |
30V 100A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
| 2406 |
100BGQ045 |
45V 100A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
| 2407 |
100BGQ045J |
45V 100A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
| 2408 |
100BGQ100 |
100V 100A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
| 2409 |
100BGQ100J |
100V 100A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
| 2410 |
100CD12 |
General-Purpose silicon rectifier 150A |
TOSHIBA |
| 2411 |
100FD12 |
General-Purpose silicon rectifier 150A |
TOSHIBA |
| 2412 |
100GD12 |
General-Purpose silicon rectifier 150A |
TOSHIBA |
| 2413 |
100HD12 |
General-Purpose silicon rectifier 150A |
TOSHIBA |
| 2414 |
100JD12 |
General-Purpose silicon rectifier 150A |
TOSHIBA |
| 2415 |
100KD12 |
General-Purpose silicon rectifier 150A |
TOSHIBA |
| 2416 |
100LD12 |
General-Purpose silicon rectifier 150A |
TOSHIBA |
| 2417 |
100MT160PA |
1600V 3 Phase Bridge in a MTP package with flat pins |
International Rectifier |
| 2418 |
100MT160PB |
1600V 3 Phase Bridge in a MTP package with round pins |
International Rectifier |
| 2419 |
100ND12 |
General-Purpose silicon rectifier 150A |
TOSHIBA |
| 2420 |
101 |
1 W, 28 V, 500-1200 MHz common base transistor |
GHz Technology |
| 2421 |
101 |
0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER |
SGS Thomson Microelectronics |
| 2422 |
1011-050 |
High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications |
SGS Thomson Microelectronics |
| 2423 |
1011-055 |
High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications |
SGS Thomson Microelectronics |
| 2424 |
1011-060 |
High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output |
SGS Thomson Microelectronics |
| 2425 |
1011-175 |
High power Class C transistor |
SGS Thomson Microelectronics |
| 2426 |
1011-225 |
High power Class C transistor designed for L-Band Avionics applications |
SGS Thomson Microelectronics |
| 2427 |
1011-350 |
High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications |
SGS Thomson Microelectronics |
| 2428 |
1011GN-125E |
GaN Transistors |
Microsemi |
| 2429 |
1011GN-125EL |
GaN Transistors |
Microsemi |
| 2430 |
1011GN-125EP |
GaN Transistors |
Microsemi |
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