| No. |
Part Name |
Description |
Manufacturer |
| 2401 |
BDX64C |
16A peak complementary darlington silicon power PNP transistor 117W |
Motorola |
| 2402 |
BDX65 |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 2403 |
BDX65A |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 2404 |
BDX65B |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 2405 |
BDX65C |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 2406 |
BDX66 |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
| 2407 |
BDX66A |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
| 2408 |
BDX66B |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
| 2409 |
BDX66C |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
| 2410 |
BDX67 |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
| 2411 |
BDX67A |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
| 2412 |
BDX67B |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
| 2413 |
BDX67C |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
| 2414 |
BDY80 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BDY82 |
SESCOSEM |
| 2415 |
BDY81 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BDY83 |
SESCOSEM |
| 2416 |
BDY82 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BDY80 |
SESCOSEM |
| 2417 |
BDY83 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BDY81 |
SESCOSEM |
| 2418 |
BF469 |
2.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF470 |
Continental Device India Limited |
| 2419 |
BF470 |
2.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF469 |
Continental Device India Limited |
| 2420 |
BF471 |
2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF472 |
Continental Device India Limited |
| 2421 |
BF472 |
2.000W Medium Power PNP Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF471 |
Continental Device India Limited |
| 2422 |
BF820 |
0.250W High Voltage NPN SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF821 |
Continental Device India Limited |
| 2423 |
BF821 |
0.250W High Voltage PNP SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF820 |
Continental Device India Limited |
| 2424 |
BF822 |
0.250W High Voltage NPN SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF823 |
Continental Device India Limited |
| 2425 |
BF823 |
0.250W High Voltage PNP SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF822 |
Continental Device India Limited |
| 2426 |
BFQ24 |
PNP Silicon planar epitaxial transistor, intended for use in UHF and microwave, NPN complement is BFQ22S |
Philips |
| 2427 |
BFQ51 |
Silicon wideband PNP transistor, NPN complements are BFR90 and BFR90A |
Philips |
| 2428 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
| 2429 |
BFQ52 |
PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 |
Philips |
| 2430 |
BFQ53 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, PNP complement is BFQ52 |
Philips |
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