| No. |
Part Name |
Description |
Manufacturer |
| 241 |
HY29F400BT45 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
Hynix Semiconductor |
| 242 |
HY29F400BT55 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
Hynix Semiconductor |
| 243 |
HY29F400BT70 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
Hynix Semiconductor |
| 244 |
HY29F400BT90 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
Hynix Semiconductor |
| 245 |
HY29F400TG45 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
Hynix Semiconductor |
| 246 |
HY29F400TG55 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
Hynix Semiconductor |
| 247 |
HY29F400TG70 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
Hynix Semiconductor |
| 248 |
HY29F400TG90 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
Hynix Semiconductor |
| 249 |
HY29F400TR45 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
Hynix Semiconductor |
| 250 |
HY29F400TR55 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
Hynix Semiconductor |
| 251 |
HY29F400TR70 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
Hynix Semiconductor |
| 252 |
HY29F400TR90 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
Hynix Semiconductor |
| 253 |
HY29F400TT45 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
Hynix Semiconductor |
| 254 |
HY29F400TT55 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
Hynix Semiconductor |
| 255 |
HY29F400TT70 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
Hynix Semiconductor |
| 256 |
HY29F400TT90 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
Hynix Semiconductor |
| 257 |
ICX452 |
Diagonal 9.04 mm (Type 1/1.8) 5.13M-Pixel CCD Image Sensor for High-Resolution Digital Still Cameras |
SONY |
| 258 |
ICX452AQ |
Diagonal 9.04 mm (Type 1/1.8) 5.13M-Pixel CCD Image Sensor for High-Resolution Digital Still Cameras |
SONY |
| 259 |
ICX452AQF |
Diagonal 9.04 mm (Type 1/1.8) 5.13M-Pixel CCD Image Sensor for High-Resolution Digital Still Cameras |
SONY |
| 260 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 261 |
IRF221 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 262 |
IRF330 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 263 |
IRF331 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 264 |
IRF620 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 265 |
IRF621 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 266 |
IRF730 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 267 |
IRF731 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 268 |
K1150BA |
(K1100BA Series) 5V Crystal Clock Oscillators |
Champion Technologies Inc |
| 269 |
LH28F004SU |
4Mbit(512Kbit x 8/ 256 Kbit x 16) 5V Single Voltage Flash Memory |
SHARP |
| 270 |
LH28F016SUHT |
16Mbit(1Mbit x 16/ 2Mbit x 8) 5V Single Voltage Flash Memory |
SHARP |
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