| No. |
Part Name |
Description |
Manufacturer |
| 241 |
APT10078BLL |
POWER MOS 7 1000V 14A 0.780 Ohm |
Advanced Power Technology |
| 242 |
APT10078SFLL |
POWER MOS 7 1000V 14A 0.780 Ohm |
Advanced Power Technology |
| 243 |
APT10078SLL |
POWER MOS 7 1000V 14A 0.780 Ohm |
Advanced Power Technology |
| 244 |
APT5570AN |
V(dss): 550V; 10.5A; 0.7 Ohm; N-channel enhancement mode high voltage power MOSFET |
Advanced Power Technology |
| 245 |
APT6070AN |
V(dss): 600V; 10.5A; 0.7 Ohm; N-channel enhancement mode high voltage power MOSFET |
Advanced Power Technology |
| 246 |
APT6070BNR |
V(dss): 600V; 12.0A; 0.70 Ohm; N-channel enhancement mode high voltage power MOSFET |
Advanced Power Technology |
| 247 |
APT8075BN |
POWER MOS V 800V 13.0A 0.75 Ohm / 800V 12.0A 0.90 Ohm |
Advanced Power Technology |
| 248 |
APT8075BVFR |
POWER MOS V 800V 12A 0.750 Ohm |
Advanced Power Technology |
| 249 |
APT8075BVR |
POWER MOS V 800V 12A 0.750 Ohm |
Advanced Power Technology |
| 250 |
APT8090BN |
POWER MOS V 800V 13.0A 0.75 Ohm / 800V 12.0A 0.90 Ohm |
Advanced Power Technology |
| 251 |
AQZ104 |
Power photoMOS relay, 1-channel (form A). DC type. Output rating: load voltage 400 V, load current 0.7 A. |
Matsushita Electric Works(Nais) |
| 252 |
AS165-59 |
GaAs IC High Isolation SPST Switch Positive Control 0.7-2.5 GHz |
Skyworks Solutions |
| 253 |
AS212-93 |
GaAs IC 4 x 2 Switch Matrix 0.7-3.0 GHz |
Skyworks Solutions |
| 254 |
AUIRS2332J |
Automotive High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us. |
International Rectifier |
| 255 |
AUIRS2332JTR |
Automotive High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us. |
International Rectifier |
| 256 |
BAT165A |
40 V, 0.75 A medium power Schottky barrier rectifier |
Nexperia |
| 257 |
BCR400W |
Analog Silicon SSICs - Low voltage drop of 0.7V |
Infineon |
| 258 |
BS30057Q |
Schottky diode Quads 30V 0.7V |
IPRS Baneasa |
| 259 |
BU426A |
Transistor polarity NPN Voltage Vce sat max 3 V Voltage Vceo 400 V Current Ic @ Vce sat 4 A Time fall @ Ic 0.75 ?s Current Ic av. 6 A Power Ptot 70 W Voltage Vces 900 V |
SGS Thomson Microelectronics |
| 260 |
BUK7S0R7-40H |
N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88 |
Nexperia |
| 261 |
BZV39-C0V8 |
Low noise voltage regulator diode, 0.78V, to be used with forward bias |
SESCOSEM |
| 262 |
BZX55-C0V8 |
Voltage regulator diode, 0.78V, to be used with forward bias |
SESCOSEM |
| 263 |
BZX55C0V8 |
Diode Zener Single 0.78V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 264 |
BZX83C0V8 |
Silicon Planar Z Diode 500mW in glas case 0.78V |
Siemens |
| 265 |
C-2570 |
C/A-2570X 0.7INCH, 5 X 7 DOT MATRIX DISPLAY |
PARA Light |
| 266 |
C-2570E |
C/A-2570X 0.7INCH, 5 X 7 DOT MATRIX DISPLAY |
PARA Light |
| 267 |
C-2570G |
C/A-2570X 0.7INCH, 5 X 7 DOT MATRIX DISPLAY |
PARA Light |
| 268 |
C-2570H |
C/A-2570X 0.7INCH, 5 X 7 DOT MATRIX DISPLAY |
PARA Light |
| 269 |
C-2570SR |
C/A-2570X 0.7INCH, 5 X 7 DOT MATRIX DISPLAY |
PARA Light |
| 270 |
C-2570Y |
C/A-2570X 0.7INCH, 5 X 7 DOT MATRIX DISPLAY |
PARA Light |
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