| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N1805 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 242 |
2N1806 |
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 243 |
2N1807 |
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 244 |
2N1909 |
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 245 |
2N1910 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 246 |
2N1911 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 247 |
2N1912 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 248 |
2N1913 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 249 |
2N1914 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 250 |
2N1915 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 251 |
2N1916 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 252 |
2N2023 |
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 253 |
2N2024 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 254 |
2N2025 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 255 |
2N2026 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 256 |
2N2027 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 257 |
2N2028 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 258 |
2N2029 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 259 |
2N2030 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 260 |
2N5950 |
1.5 Watt hermetically sealed glass silicon zener diode 110V |
Motorola |
| 261 |
2N6473 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. |
General Electric Solid State |
| 262 |
2N6496 |
Trans GP BJT NPN 110V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 263 |
2N6500 |
NPN transistor, 110V, 4A |
SemeLAB |
| 264 |
2SB1492 |
Trans Darlington PNP 110V 6A |
New Jersey Semiconductor |
| 265 |
3.0SMCJ110 |
3000W voltage supressor, 110V |
MEI |
| 266 |
3.0SMCJ110A |
3000W voltage supressor, 110V |
MEI |
| 267 |
30KP110 |
Diode TVS Single Uni-Dir 110V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 268 |
30KP110A |
Diode TVS Single Uni-Dir 110V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 269 |
30KP110C |
Diode TVS Single Bi-Dir 110V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 270 |
30KP110CA |
Diode TVS Single Bi-Dir 110V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| | | |
