| No. |
Part Name |
Description |
Manufacturer |
| 241 |
1S6012R |
Silicon power zener diode 12V, reverse polarity |
Texas Instruments |
| 242 |
20DZ12 |
20W 12V Zener Diode |
IPRS Baneasa |
| 243 |
2N2201 |
Trans GP BJT NPN 12V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 244 |
2N2203 |
Trans GP BJT NPN 12V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 245 |
2N2894 |
Trans GP BJT PNP 12V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 246 |
2N2894A |
Trans GP BJT PNP 12V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 247 |
2N3960 |
Trans GP BJT NPN 12V 0.05A 3-Pin TO-18 |
New Jersey Semiconductor |
| 248 |
2N4208 |
Trans GP BJT PNP 12V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 249 |
2N4258 |
Trans GP BJT PNP 12V 0.05A |
New Jersey Semiconductor |
| 250 |
2N4258A |
Trans GP BJT PNP 12V 0.05A |
New Jersey Semiconductor |
| 251 |
2N5133 |
Trans GP BJT NPN 12V 0.05A 4-Pin TO-72 |
New Jersey Semiconductor |
| 252 |
2N5174 |
Trans GP BJT NPN 12V 0.05A 4-Pin TO-72 |
New Jersey Semiconductor |
| 253 |
2N5175 |
Trans GP BJT NPN 12V 0.05A 4-Pin TO-72 |
New Jersey Semiconductor |
| 254 |
2N5176 |
Trans GP BJT NPN 12V 0.05A 4-Pin TO-72 |
New Jersey Semiconductor |
| 255 |
2N5179 |
0.200W General Purpose NPN Metal Can Transistor. 12V Vceo, 0.050A Ic, 25 - 250 hFE. |
Continental Device India Limited |
| 256 |
2N5179 |
Trans GP BJT NPN 12V 0.05A 4-Pin TO-72 |
New Jersey Semiconductor |
| 257 |
2N5927 |
1.5 Watt hermetically sealed glass silicon zener diode 12V |
Motorola |
| 258 |
2N940 |
Trans GP BJT NPN 12V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 259 |
2N941 |
Trans GP BJT NPN 12V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 260 |
2N942 |
Trans GP BJT NPN 12V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 261 |
2N943 |
Trans GP BJT NPN 12V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 262 |
2N944 |
Trans GP BJT NPN 12V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 263 |
2N945 |
Trans GP BJT NPN 12V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 264 |
2N946 |
Trans GP BJT NPN 12V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 265 |
2SC3282A |
Class C, 800-960MHz 12V power transistor (This datasheet of NEM082081B-12 is also the datasheet of 2SC3282A, see the Electrical Characteristics table) |
NEC |
| 266 |
2SC3283A |
Class C, 800-960MHz 12V power transistor (This datasheet of NEM084081B-12 is also the datasheet of 2SC3283A, see the Electrical Characteristics table) |
NEC |
| 267 |
2SC3541 |
Class A, 1.3 GHz 12V power transistor (This datasheet of NEL130681-12 is also the datasheet of 2SC3541, see the Electrical Characteristics table) |
NEC |
| 268 |
2SC3542 |
Class A, 1.3 GHz 12V power transistor (This datasheet of NEL132081-12 is also the datasheet of 2SC3542, see the Electrical Characteristics table) |
NEC |
| 269 |
2SC5463 |
Trans GP BJT NPN 12V 0.06A 3-Pin USM |
New Jersey Semiconductor |
| 270 |
2SC5890 |
Trans GP BJT NPN 12V 0.075A 3-Pin MPAK |
New Jersey Semiconductor |
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