| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N3926 |
RF NPN Transistor 130...230MHZ FM mobile applications |
SGS Thomson Microelectronics |
| 242 |
2N3927 |
RF NPN Transistor 130...230MHZ FM mobile applications |
SGS Thomson Microelectronics |
| 243 |
2N5320 |
10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. |
Continental Device India Limited |
| 244 |
2N5530 |
Trans GP BJT NPN 130V 20A 3-Pin TO-63 |
New Jersey Semiconductor |
| 245 |
2N5533 |
Trans GP BJT NPN 130V 20A 3-Pin TO-63 |
New Jersey Semiconductor |
| 246 |
2N5534 |
Trans GP BJT NPN 130V 20A 3-Pin TO-63 |
New Jersey Semiconductor |
| 247 |
2N6080 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 248 |
2N6081 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 249 |
2N6083 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 250 |
2N6084 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 251 |
2N6474 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. |
General Electric Solid State |
| 252 |
3.0SMCJ130 |
3000W voltage supressor, 130V |
MEI |
| 253 |
3.0SMCJ130A |
3000W voltage supressor, 130V |
MEI |
| 254 |
30KP130 |
Diode TVS Single Uni-Dir 130V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 255 |
30KP130A |
Diode TVS Single Uni-Dir 130V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 256 |
30KP130C |
Diode TVS Single Bi-Dir 130V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 257 |
30KP130CA |
Diode TVS Single Bi-Dir 130V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 258 |
30KPA130A |
Diode TVS Single Uni-Dir 130V 30KW 2-Pin |
New Jersey Semiconductor |
| 259 |
30KPA130C |
Diode TVS Single Uni-Dir 130V 30KW 2-Pin |
New Jersey Semiconductor |
| 260 |
3EZ130D |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 261 |
3EZ130D1 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 262 |
3EZ130D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 1% tolerance. |
Motorola |
| 263 |
3EZ130D10 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 264 |
3EZ130D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 10% tolerance. |
Motorola |
| 265 |
3EZ130D2 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 266 |
3EZ130D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 2% tolerance. |
Motorola |
| 267 |
3EZ130D3 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 268 |
3EZ130D4 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 269 |
3EZ130D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. |
Motorola |
| 270 |
3VR130 |
3 Watt Epoxy Silicon Zener Diode 130V |
Transitron Electronic |
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