| No. |
Part Name |
Description |
Manufacturer |
| 241 |
SB160-05H |
50V, 16A Rectifier Schottky Barrier Diode (Twin Type � Cathode Common) |
SANYO |
| 242 |
SB160-05R |
50V, 16A Rectifier Schottky Barrier Diode (Twin Type � Cathode Common) |
SANYO |
| 243 |
SB160-09 |
90V, 16A Rectifier Schottky Barrier Diode (Twin Type � Cathode Common) |
SANYO |
| 244 |
SB160-09R |
90V, 16A Rectifier Schottky Barrier Diode (Twin Type � Cathode Common) |
SANYO |
| 245 |
SB160-18 |
180V, 16A Rectifier Schottky Barrier Diode (Twin Type � Cathode Common) |
SANYO |
| 246 |
SBA160-04R |
Schottky Barrier Diode (Twin Type � Cathode Common) 40V, 16A Rectifier |
SANYO |
| 247 |
SBA160-04Y |
Schottky Barrier Diode (Twin Type � Cathode Common) 40V, 16A Rectifier |
SANYO |
| 248 |
SBA160-09R |
Schottky Barrier Diode (Twin Type � Cathode Common) 90V, 16A Rectifier |
SANYO |
| 249 |
SD1460 |
Trans GP BJT NPN 25V 16A 4-Pin(4+Tab) Case M-174 |
New Jersey Semiconductor |
| 250 |
SF16B12 |
Silicon alloy-diffused junction thyristor 16A 100V |
TOSHIBA |
| 251 |
SF16D12 |
Silicon alloy-diffused junction thyristor 16A 200V |
TOSHIBA |
| 252 |
SF16F12 |
Silicon alloy-diffused junction thyristor 16A 300V |
TOSHIBA |
| 253 |
SF16G12 |
Silicon alloy-diffused junction thyristor 16A 400V |
TOSHIBA |
| 254 |
SF16J12 |
Silicon alloy-diffused junction thyristor 16A 600V |
TOSHIBA |
| 255 |
SF16L12 |
Silicon alloy-diffused junction thyristor 16A 800V |
TOSHIBA |
| 256 |
SF16N12 |
Silicon alloy-diffused junction thyristor 16A 1000V |
TOSHIBA |
| 257 |
SF16Q12 |
Silicon alloy-diffused junction thyristor 16A 1200V |
TOSHIBA |
| 258 |
SH16B12 |
Silicon alloy-diffused junction high speed thyristor 16A 100V |
TOSHIBA |
| 259 |
SH16D12 |
Silicon alloy-diffused junction high speed thyristor 16A 200V |
TOSHIBA |
| 260 |
SH16F12 |
Silicon alloy-diffused junction high speed thyristor 16A 300V |
TOSHIBA |
| 261 |
SH16G12 |
Silicon alloy-diffused junction high speed thyristor 16A 400V |
TOSHIBA |
| 262 |
SH16H12 |
Silicon alloy-diffused junction high speed thyristor 16A 500V |
TOSHIBA |
| 263 |
SH16J12 |
Silicon alloy-diffused junction high speed thyristor 16A 600V |
TOSHIBA |
| 264 |
STB16NB25 |
N - CHANNEL 250V - 0.220Ohm - 16A - TO-263 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 265 |
STB16NF06L |
N-CHANNEL 60V - 0.07 OHM - 16A D2PAK STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
| 266 |
STB16NF06L |
N-CHANNEL 60V - 0.07 OHM - 16A D2PAK STRIPFET POWER MOSFET |
ST Microelectronics |
| 267 |
STB16NF06LT4 |
N-CHANNEL 60V - 0.07 OHM - 16A D2PAK STRIPFET POWER MOSFET |
ST Microelectronics |
| 268 |
STB16NS25 |
N-CHANNEL 250V 0.23 OHM 16A D2PAK MESH OVERLAY MOSFET |
SGS Thomson Microelectronics |
| 269 |
STB16NS25 |
N-CHANNEL 250V - 0.23 OHM - 16A D2PAK MESH OVERLAY MOSFET |
ST Microelectronics |
| 270 |
STB16NS25T4 |
N-CHANNEL 250V - 0.23 OHM - 16A D2PAK MESH OVERLAY MOSFET |
ST Microelectronics |
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