| No. |
Part Name |
Description |
Manufacturer |
| 241 |
269-D-180-F1480-A |
1480 nm pump laser module. D - isolated, PMF. Operating power 180 mW. A = no connector. |
Agere Systems |
| 242 |
269-D-180-F1480-B |
1480 nm pump laser module. D - isolated, PMF. Operating power 180 mW. B = SC/APC connector. |
Agere Systems |
| 243 |
269-D-180-F1480-C |
1480 nm pump laser module. D - isolated, PMF. Operating power 180 mW. C = FC/APC connector. |
Agere Systems |
| 244 |
269-D-180-M-14XX-A |
DFB, multimode pump laser module. Stable wavelength perfoprmance within the 1420 nm to 1510 nm (wavelength 14xx). Operating power 180 mW. Isolated, PMF. No connector. |
Agere Systems |
| 245 |
269-D-180-M-14XX-B |
DFB, multimode pump laser module. Stable wavelength perfoprmance within the 1420 nm to 1510 nm (wavelength 14xx). Operating power 180 mW. Isolated, PMF. Connector SC/APC. |
Agere Systems |
| 246 |
269-D-180-M-14XX-C |
DFB, multimode pump laser module. Stable wavelength perfoprmance within the 1420 nm to 1510 nm (wavelength 14xx). Operating power 180 mW. Isolated, PMF. Connector FC/APC. |
Agere Systems |
| 247 |
2722 162 02531 |
Circulators/Isolators 1590 to 1800 MHz |
Philips |
| 248 |
2722 162 02641 |
Circulators/Isolators 1590 to 1800 MHz |
Philips |
| 249 |
2N3055 |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS |
Motorola |
| 250 |
2N3055A |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS |
Motorola |
| 251 |
2N3415 |
0.360W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.500A Ic, 180 - 540 hFE |
Continental Device India Limited |
| 252 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 253 |
2N5833 |
Trans GP BJT NPN 180V 0.6A 3-Pin TO-92 |
New Jersey Semiconductor |
| 254 |
2N5955 |
1.5 Watt hermetically sealed glass silicon zener diode 180V |
Motorola |
| 255 |
2N6687 |
Trans GP BJT NPN 180V 25A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 256 |
2SA1112 |
Trans GP BJT PNP 180V 1.5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 257 |
2SA1930 |
Trans GP BJT PNP 180V 2A 3-Pin(3+Tab) TO-220NIS |
New Jersey Semiconductor |
| 258 |
2SA2140 |
Trans GP BJT PNP 180V 1.5A 3-Pin(3+Tab) TO-220D-A1 |
New Jersey Semiconductor |
| 259 |
2SC3053 |
150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710 |
Isahaya Electronics Corporation |
| 260 |
2SC4383 |
Trans GP BJT NPN 180V 15A 3-Pin(3+Tab) TO-3PF |
New Jersey Semiconductor |
| 261 |
2SC4475 |
NPN Triple Diffused Planar Silicon Transistor 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 262 |
2SC4476 |
NPN Triple Diffused Planar Silicon Transistor 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 263 |
2SC4636LS |
NPN Triple Diffused Planar Silicon Transistor 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 264 |
2SC4637LS |
NPN Triple Diffused Planar Silicon Transistor 1800V / 15mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 265 |
2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. |
Isahaya Electronics Corporation |
| 266 |
2SD981 |
Trans GP BJT NPN 180V 5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 267 |
2SD982 |
Trans GP BJT NPN 180V 5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 268 |
2SK2132-T |
High-voltage power MOS FET 180V/4A |
NEC |
| 269 |
300WD11 |
Silicon alloy diffused junction rectifier 350A 1800V |
TOSHIBA |
| 270 |
30KP180 |
Diode TVS Single Uni-Dir 180V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
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